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부품번호 | BSR17 기능 |
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기능 | NPN General Purpose Amplifier | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
BSR17A
C
SOT-23
Mark: U92
E
B
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current - Continuous
TJ, Tstg
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
40
60
6.0
200
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Max
*BSR17A
350
2.8
357
Units
V
V
V
mA
°C
Units
mW
mW /°C
°C/W
3
1997 Fairchild Semiconductor Corporation
Typical Characteristics (continued)
Noise Figure vs Frequency
12
I C = 1.0 mA
10 R S = 200Ω
I C = 50 µA
8 R S = 1.0 kΩ
V CE = 5.0V
I C = 0.5 mA
6 R S = 200Ω
4
2
I C = 100 µA, R S = 500 Ω
0
0.1 1 10 100
f - FREQUENCY (kHz)
Current Gain and Phase Angle
vs Frequency
50
45 h fe
40
35
30
25 θ
20
15
10 V CE = 40V
5 I C = 10 mA
0
1 10 100
f - FREQUENCY (MHz)
0
20
40
60
80
100
120
140
160
180
1000
Turn-On Time vs Collector Current
500
IB1 = IB2 =
Ic
10
40V
100 15V
t r @ V CC = 3.0V
2.0V
10
t d @ VCB = 0V
5
1 10
100
I C - COLLECTOR CURRENT (mA)
NPN General Purpose Amplifier
(continued)
Noise Figure vs Source Resistance
12
I C = 1.0 mA
10
I C = 5.0 mA
8
I C= 50 µA
6
4 I C= 100 µA
2
0
0.1 1 10 100
R S - SOURCE RESISTANCE ( kΩ )
350
300
250
200
150
100
50
0
0
Power Dissipation vs
Ambient Temperature
SOT-23
25 50 75 100 125 150
TEMPERATURE (oC)
Rise Time vs Collector Current
500
VCC = 40V
IB1 = IB2=
Ic
10
100
T J = 125°C
T J = 25°C
10
5
1 10 100
I C - COLLECTOR CURRENT (mA)
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ BSR17.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BSR12 | PNP switching transistor | NXP Semiconductors |
BSR13 | NPN switching transistors | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |