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PDF BSR30 Data sheet ( Hoja de datos )
| Número de pieza | BSR30 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSR30 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – JUNE 1996
7
COMPLEMENTARY TYPE – BSR40
PARTMARKING DETAIL – BR1
BSR30
C
ABSOLUTE MAXIMUM RATINGS.
C
B
SOT89
E
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-70 V
Collector-Emitter Voltage
VCEO
-60 V
Emitter-Base Voltage
VEBO
-5 V
Peak Pulse Current
ICM -2 A
Continuous Collector Current
IC
-1 A
Power Dissipation at Tamb=25°C
Ptot
1W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-70
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-60
V IC=-10mA
Emitter-Base Breakdown Voltage V(BR)EBO
Collector Cut-Off Current
ICBO
-5
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Collector Capacitance
Emitter Capacitance
Transition Frequency
VCE(sat)
VBE(sat)
hFE
Cc
Ce
fT
10
40
30
100
-100
-50
-0.25
-0.5
-1.0
-1.2
120
20
120
V
nA
µA
V
V
V
V
pF
pF
MHz
IE=-10µA
VCB=-60V
VCB=-60V, Tamb=125°C
IC =-150mA, IB=-15mA
IC =-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC =-500mA, IB=-50mA
IC =-100µA, VCE =-5V
IC =-100mA, VCE =-5V
IC =-500mA, VCE =-5V
VCB =-10V, f =1MHz
VEB =-0.5V, f =1MHz
IC=-50mA, VCE=-10V
f =35MHz
Turn-On Time
Ton 500 ns
Turn-Off Time
Toff 650 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT551 datasheet.
VCC =-20V, IC =-100mA
IB1 =-IB2 =-5mA
3 - 65
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BSR30.PDF ] | |
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