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PDF BSS110 Data sheet ( Hoja de datos )
| Número de pieza | BSS110 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 1999
BSS84 / BSS110
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is designed to minimize on-state resistance, provide
rugged and reliable performance and fast switching. They
can be used, with a minimum of effort, in most applications
requiring up to 0.17A DC and can deliver pulsed currents up
to 0.68A. This product is particularly suited to low voltage
applications requiring a low current high side switch.
Features
BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V.
BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V
Voltage controlled p-channel small signal switch.
High density cell design for low RDS(ON) .
High saturation current.
____________________________________________________________________________________________
S
G
D
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
BSS84
VDSS
VDGR
VGSS
ID
PD
TJ,TSTG
TL
Drain-Source Voltage
Drain-Gate Voltage (RGS < 20 KΩ)
Gate-Source Voltage - Continuous
Drain Current - Continuous @ TA = 30/35oC
- Pulsed @ TA = 25oC
Maximum Power Dissipation TA = 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds
-0.13
-0.52
0.36
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient
350
-50
-50
±20
-55 to 150
300
BSS110
-0.17
-0.68
0.63
200
Units
V
V
V
A
W
°C
°C
°C/W
© 1997 Fairchild Semiconductor Corporation
BSS84 Rev. C1 / BSS110. Rev. A2
1 page  
Typical Electrical Characteristics (continued)
0 .5
TJ = -55°C
0 .4
25°C
0 .3
125°C
0 .2
0 .1
VDS = -10V
0
-0.2 -0.4 -0.6 -0.8
-1
ID , DRAIN CURRENT (A)
Figure 13. Transconductance Variation with Drain
Current and Temperature
2
1
0.5
0.1
0.05
0.01
RDS(ON) Lim it
VGS = -10V
SINGLE PULSE
TA = 25°C
100us
1ms
10m s
10
1s
0m
s
10s
DC
0.005
1
2 5 10 20 30
- V DS , DRAIN -SOURCE VOLTAGE (V)
50
Figure 14. Maximum Safe Operating Area
80
1
0.5
0.2
0.1
0.05
0.01
D = 0.5
0 .2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01 0.1
1
t1, TIME (sec)
Figure 15. Transient Thermal Response Curve
Note : Characterization performed using a circuit board with 175oC/W
typical case-to-ambient thermal resistance.
R θJA (t) = r(t)
*
o
R θJA
R θJA = 350 C/ W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10 100
300
BSS84 Rev. C1 / BSS110. Rev. A2
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSS110.PDF ] | |
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