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PDF BSS82B Data sheet ( Hoja de datos )
| Número de pieza | BSS82B | |
| Descripción | PNP Silicon Switching Transistors | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS82B (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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PNP Silicon Switching Transistors
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 (NPN)
BSS80, BSS82
3
2
1 VPS05161
Type
BSS80B
BSS80C
BSS82B
BSS82C
Marking
CHs
CJs
CLs
CMs
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 77 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BSS80 BSS82
40 60
60
5
800
1
100
200
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
220
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
V
mA
A
mA
mW
°C
K/W
1 Nov-30-2001
1 page  
BSS80, BSS82
Saturation voltage IC = f (VBEsat, VCEsat)
hFE = 10
10 3 BSS 80/82
mA
ΙC
10 2
5
VCE
EHP00683
VBE
Delay time td = f (IC)
Rise time tr = f (IC)
10 3 BSS 80/82
ns
5
t r, t d
EHP00684
VBE = 0 V, VCC = 10 V,
VBE = 20 V, VCC = 30 V
tr
10 1 10 2 t d
5
5
10 0
5
10 -1
0
0.2 0.4 0.6 0.8 1.0 1.2 V 1.6
VBE sat , VCE sat
Storage time tstg = f(IC)
10 1
10 0
5 10 1
Fall time tf = f (IC)
5 10 2 mA 5 10 3
ΙC
10 3 BSS 80/82
ns
5
t stg
10 2
5 hFE = 10
hFE = 20
EHP00685
10 3 BSS 80/82
ns
5
tf
hFE = 20
hFE = 10
10 2
EHP00686
VCC = 30 V
5
10 1
10 0
5 10 1
5 10 2 mA 5 10 3
ΙC
10 1
10 0
5
5 10 1
5 10 2 mA 5 10 3
ΙC
Nov-30-2001
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BSS82B.PDF ] | |
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