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PDF BSV52 Data sheet ( Hoja de datos )

Número de pieza BSV52
Descripción NPN Switching Transistor
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! BSV52 Hoja de datos, Descripción, Manual

BSV52
C
SOT-23
Mark: B2
E
B
NPN Switching Transistor
This device is designed for high speed saturated switching at
collector currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCES
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
12
20
5.0
200
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Max
*BSV52
225
1.8
556
Units
V
V
V
mA
°C
Units
mW
mW /°C
°C/W
1997 Fairchild Semiconductor Corporation

1 page




BSV52 pdf
Typical Characteristics (continued)
Fall Time vs Turn On
and Turn Off Base Currents
-6
I C= 10 mA
-5 VCC = 3.0 V
-4
t f = 7.0 ns
-3
8.0 ns
-2 10 ns
-1
0
0 2 4 6 8 10
I B1 - TURN ON BASE CURRENT (mA)
NPN Switching Transistor
(continued)
Fall Time vs Turn On
and Turn Off Base Currents
-12
I C= 30 mA
-10 VCC = 3.0 V
3.0 ns
4.0 ns
-8
ft = 2.0 ns
-6 5.0 ns
-4
-2
0
0 2 4 6 8 10
I B1 - TURN ON BASE CURRENT (mA)
12
Fall Time vs Turn On
and Turn Off Base Currents
-30
I C= 100 mA
-25 VCC = 3.0 V
3.0 ns
4.0 ns
-20
t f = 2.0 ns
-15
8.0 ns
-10 12.0 ns
-5
0
0 5 10 15 20 25 30
I B1 - TURN ON BASE CURRENT (mA)
Delay Time vs Base-Emitter OFF
Voltage and Turn On Base Current
-6
I C= 10 mA
-5 V CC= 3.0 V
t d = 8.0 ns
-4
-3
5.0 ns
4.0 ns
-2
3.0 ns
-1
0
12
5 10 20
50
I B1 - TURN ON BASE CURRENT (mA)
Rise Time vs. Turn On Base
Current and Collector Current
50
VCC = 3.0 V
10 t r= 2.0 ns
5.0 ns
1
10 ns
20 ns
0
1 10 100 500
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
350
300
250 SOT-23
200
150
100
50
0
0 25 50 75 100 125
TEMPERATURE ( oC)
150

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