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부품번호 | BT134-600 기능 |
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기능 | 4Q Triac | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BT134-600
4Q Triac
21 November 2013
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT82 plastic package intended for use in
general purpose bidirectional switching and phase control applications.
2. Features and benefits
• Compact package
• High blocking voltage capability
• Less sensitive gate for improved noise immunity
• Planar passivated for voltage ruggedness and reliability
• Triggering in all four quadrants
3. Applications
• General purpose low power motor control
• Home appliances
• Industrial process control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 25 A
- - 4A
- 5 35 mA
- 8 35 mA
- 11 35 mA
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NXP Semiconductors
BT134-600
4Q Triac
5
IT(RMS)
(A)
4
3
2
1
003aae828
12
IT(RMS)
(A)
10
8
6
4
2
0 0 3 aae8 3 0
0
- 50
0
50 100 150
Tmb (°C)
0
10-2
10-1
1 10
surge duration(s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz
Tmb ≤ 107 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
8
Pt o t
(W)
6
conduction form
angle factor
(degrees) a
30 4
60 2.8
90 2.2
120 1.9
180 1.57
4
#
0 0 3 aae8 2 7
# = 180°
1 2 0°
90 °
60 °
30°
2
0
01234
Fig. 3.
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Total power dissipation as a function of RMS on-state current; maximum values
IT(RMS) (A)
5
BT134-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 November 2013
© NXP N.V. 2013. All rights reserved
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4페이지 NXP Semiconductors
BT134-600
4Q Triac
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 5 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 600 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dVcom/dt
rate of change of
commutating voltage
VD = 400 V; Tj = 95 °C; dIcom/dt = 1.8 A/
ms; IT = 4 A; gate open circuit
tgt gate-controlled turn-on ITM = 6 A; VD = 600 V; IG = 0.1 A; dIG/
time dt = 5 A/µs
Min Typ Max Unit
- 5 35 mA
- 8 35 mA
- 11 35 mA
- 30 70 mA
- 7 20 mA
- 16 30 mA
- 5 20 mA
- 7 30 mA
- 5 15 mA
- 1.4 1.7 V
-
0.7 1
V
0.25 0.4 -
V
- 0.1 0.5 mA
100 250 -
V/µs
- 50 - V/µs
- 2 - µs
BT134-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 November 2013
© NXP N.V. 2013. All rights reserved
7 / 13
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부품번호 | 상세설명 및 기능 | 제조사 |
BT134-600 | 4Q Triac | NXP Semiconductors |
BT134-600 | TRIAC | SemiHow |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |