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부품번호 | BT134-600E 기능 |
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기능 | 4Q Triac | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BT134-600E
4Q Triac
21 November 2013
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT82 plastic package intended
for use in general purpose bidirectional switching and phase control applications. This
"series E" sensitive gate triac is intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
• Compact package
• Direct interfacing to logic level ICs
• Direct interfacing to low power gate drive circuits
• High blocking voltage capability
• Low holding current for low current loads and lowest EMI at commutation
• Planar passivated for voltage ruggedness and reliability
• Sensitive gate
• Triggering in all four quadrants
3. Applications
• General purpose low power motor control
• Home appliances
• Industrial process control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 25 A
- - 4A
-
2.5 10
mA
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NXP Semiconductors
BT134-600E
4Q Triac
5
IT(RMS)
(A)
4
3
2
1
003aae828
12
IT(RMS)
(A)
10
8
6
4
2
0 0 3 aae8 3 0
0
- 50
0
50 100 150
Tmb (°C)
0
10-2
10-1
1 10
surge duration(s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz
Tmb ≤ 107 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
8
Pt o t
(W)
6
conduction form
angle factor
(degrees) a
30 4
60 2.8
90 2.2
120 1.9
180 1.57
4
#
0 0 3 aae8 2 7
# = 180°
1 2 0°
90 °
60 °
30°
2
0
01234
Fig. 3.
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Total power dissipation as a function of RMS on-state current; maximum values
IT(RMS) (A)
5
BT134-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 November 2013
© NXP N.V. 2013. All rights reserved
4 / 13
4페이지 NXP Semiconductors
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 5 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 600 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
tgt gate-controlled turn-on ITM = 6 A; VD = 600 V; IG = 0.1 A; dIG/
time dt = 5 A/µs
BT134-600E
4Q Triac
Min Typ Max Unit
-
2.5 10
mA
- 4 10 mA
- 5 10 mA
- 11 25 mA
- 3 15 mA
- 10 20 mA
-
2.5 15
mA
- 4 20 mA
-
2.2 15
mA
- 1.4 1.7 V
-
0.7 1
V
0.25 0.4 -
V
- 0.1 0.5 mA
- 50 - V/µs
- 2 - µs
BT134-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 November 2013
© NXP N.V. 2013. All rights reserved
7 / 13
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BT134-600 | 4Q Triac | NXP Semiconductors |
BT134-600 | TRIAC | SemiHow |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |