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부품번호 | BT136-600 기능 |
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기능 | 4Q Triac | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BT136-600
4Q Triac
Rev. 03 — 4 April 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated four quadrant triac in a SOT78 plastic package intended for use in
general purpose bidirectional switching and phase control applications.
1.2 Features and benefits
High blocking voltage capability
Less sensitive gate for improved noise
immunity
Planar passivated for voltage
ruggedness and reliability
Triggering in all four quadrants
1.3 Applications
General purpose motor control
General purpose switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDRM
repetitive peak
off-state voltage
ITSM
IT(RMS)
non-repetitive
peak on-state
current
RMS on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; see Figure 4;
see Figure 5
full sine wave; Tmb ≤ 107 °C;
see Figure 1; see Figure 2;
see Figure 3
Static characteristics
IGT
gate trigger
VD = 12 V; IT = 0.1 A; T2+ G+;
current
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; see Figure 7
Min Typ Max Unit
- - 600 V
- - 25 A
- - 4A
- 5 35 mA
- 8 35 mA
- 11 35 mA
- 30 70 mA
NXP Semiconductors
BT136-600
4Q Triac
8
Ptot
(W)
6
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
4
α
2
003aae827
α = 180°
120 °
90°
60°
30°
0
012345
IT(RMS) (A)
Fig 3. Total power dissipation as a function of RMS on-state current; maximum values
30
ITSM
(A)
25
003aae831
20
15
10 IT ITSM
t
5
1/f
Tj(init) = 25 °C max
0
1 10 102 103 104
number of cycles
f = 50 Hz
Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT136-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 4 April 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BT136-600
4Q Triac
3
IGT
IGT (25 °C)
2
1
(1)
(2)
(3)
(4)
003aae833
(1)
(2)
(3)
(4)
3
IL
IL(25°C)
2
1
003aae835
0
−60 −10
40
90 140
Tj (°C)
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig 7. Normalized gate trigger current as a function of
junction temperature
0
−60 −10
40
90 140
Tj (°C)
Fig 8. Normalized latching current as a function of
junction temperature
2.0
IH
IH(25°C)
1.5
003aae837
12
IT
(A)
8
003aae834
1.0
4
0.5
(1) (2) (3)
0
−60 −10
40
90 140
Tj (°C)
Fig 9. Normalized holding current as a function of
junction temperature
0
0123
VT (V)
Vo = 1.27 V
Rs = 0.091 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 10. On-state current as a function of on-state
voltage
BT136-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 4 April 2011
© NXP B.V. 2011. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |