|
|
|
부품번호 | BT139X-600E 기능 |
|
|
기능 | 4Q Triac | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BT139-600E
4Q Triac
27 September 2013
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic
package intended for use in applications requiring high bidirectional transient and
blocking voltage capability and high thermal cycling performance. Typical applications
include motor control, industrial and domestic lighting, heating and static switching. This
sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
• Direct triggering from low power drivers and logic ICs
• High blocking voltage capability
• Planar passivated for voltage ruggedness and reliability
• Sensitive gate
• Triggering in all four quadrants
3. Applications
• General purpose motor control
• General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 155 A
- - 16 A
-
2.5 10
mA
- 4 10 mA
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
BT139-600E
4Q Triac
50
IT(RMS)
(A)
40
30
20
10
001aab090
20
IT(RMS)
(A)
15
10
5
001aab091
(1)
0
10- 2
10- 1
1 10
surge duration (s)
f = 50 Hz; Tmb = 99 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
25
Ptot
(W)
20
15
10
5
0
- 50 0
(1) Tmb = 99 °C
50
100 150
Tmb (°C)
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
001aab093 95
α = Tmb(max)
180 (°C)
120 101
90
60 107
30
113
α
α 119
0
05
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
10
15
IT(RMS) (A)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values.
125
20
BT139-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 September 2013
© NXP N.V. 2013. All rights reserved
4 / 13
4페이지 NXP Semiconductors
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 20 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 600 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
tgt gate-controlled turn-on ITM = 20 A; VD = 600 V; IG = 0.1 A; dIG/
time dt = 5 A/µs
BT139-600E
4Q Triac
Min Typ Max Unit
-
2.5 10
mA
- 4 10 mA
- 5 10 mA
- 11 25 mA
-
3.2 30
mA
- 16 40 mA
- 4 30 mA
-
5.5 40
mA
- 4 45 mA
- 1.2 1.6 V
-
0.7 1
V
0.25 0.4 -
V
- 0.1 0.5 mA
- 50 - V/µs
- 2 - µs
BT139-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 September 2013
© NXP N.V. 2013. All rights reserved
7 / 13
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ BT139X-600E.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BT139X-600 | 4Q Triacs | NXP Semiconductors |
BT139X-600E | 4Q Triac | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |