DataSheet.es    


PDF BT145-600R Data sheet ( Hoja de datos )

Número de pieza BT145-600R
Descripción Thyristors
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de BT145-600R (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! BT145-600R Hoja de datos, Descripción, Manual

Philips Semiconductors
Thyristors
Product specification
BT145 series
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional blocking voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT145-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
500R 600R 800R
500 600 800
16 16 16
25 25 25
300 300 300
V
A
A
A
PINNING - TO220AB
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
tab
1 23
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Tmb 101 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 50 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -600R -800R
5001 6001 800
16
25
300
330
450
200
5
5
5
20
0.5
150
125
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997
1
Rev 1.200

1 page




BT145-600R pdf
Philips Semiconductors
Thyristors
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10,3
max
3,7
2,8
1,3
3,0 max
not tinned
1,3
max 1 2 3
(2x)
3,0
13,5
min
0,9 max (3x)
2,54 2,54
Product specification
BT145 series
4,5
max
5,9
min
15,8
max
0,6
2,4
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997
5
Rev 1.200

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet BT145-600R.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BT145-600RThyristorsNXP Semiconductors
NXP Semiconductors

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar