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PDF BT148M-600Z Data sheet ( Hoja de datos )
| Número de pieza | BT148M-600Z | |
| Descripción | Thyristors logic level | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
Thyristors
logic level
Product specification
BT148S-600Z
BT148M-600Z
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate thyristor in
a plastic envelope, suitable for surface
mounting, intended for use in general
purpose switching and phase control
applications. These devices feature a
gate-cathode reverse breakdown voltage
specification. They can be interfaced
directly to microcontrollers, logic integrated
circuits and other low power gate trigger
circuits.
SYMBOL
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
PARAMETER
BT148S (or BT148M)-
Repetitive peak off-state
voltage
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
MAX. UNIT
600Z
600
V
2.5 A
4A
35 A
PINNING - SOT428
PIN Standard Alternative
NUMBER
S
M
1
cathode
gate
2
anode
anode
3 gate cathode
tab
anode
anode
PIN CONFIGURATION
tab
2
13
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state voltage
Average on-state current
RMS on-state current
half sine wave; Tmb ≤ 111 ˚C
all conduction angles
Non-repetitive peak on-state
current
half sine wave; Tj = 25 ˚C prior to surge
t = 10 ms
t = 8.3 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of on-state ITM = 10 A; IG = 50 mA;
current after triggering
dIG/dt = 50 mA/µs
Peak gate current
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction temperature
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
6001
2.5
4
35
38
6.1
50
2
5
0.5
150
1252
UNIT
V
A
A
A
A
A2s
A/µs
A
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
September 1997
1
Rev 1.100
1 page  
Philips Semiconductors
Thyristors
logic level
Product specification
BT148S-600Z
BT148M-600Z
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
6.73 max
tab
1.1
seating plane
2.38 max
0.93 max
5.4
6.22 max
10.4 max
4 min
4.6
1
2.285 (x2)
2
3
0.5 min
0.8 max
(x2)
0.5
0.3
0.5
Fig.13. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15 1.5
2.5
Notes
1. Plastic meets UL94 V0 at 1/8".
4.57
Fig.14. SOT428 : minimum pad sizes for surface mounting.
September 1997
5
Rev 1.100
5 Page | ||
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| PDF Descargar | [ Datasheet BT148M-600Z.PDF ] | |
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