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PDF BT148W Data sheet ( Hoja de datos )

Número de pieza BT148W
Descripción Thyristors logic level
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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Philips Semiconductors
Thyristors
logic level
Product specification
BT148W series
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope
suitable for surface mounting,
intended for use in general purpose
switching and phase control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT148W-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
400R 500R 600R
400 500 600
0.6 0.6 0.6
111
10 10 10
V
A
A
A
PINNING - SOT223
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
4
123
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Tsp 112 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 4 A; IG = 200 mA;
dIG/dt = 200 mA/µs
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-400R -500R -600R
4001 5001 6001
0.6
1
10
11
0.5
50
1
5
5
1.2
0.12
150
1252
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kor less.
October 1997
1
Rev 1.300

1 page




BT148W pdf
Philips Semiconductors
Thyristors
logic level
MOUNTING INSTRUCTIONS
1.5
min
3.8
min
Product specification
BT148W series
Dimensions in mm.
1.5
min
(3x)
1.5
min
2.3
4.6
6.3
Fig.13. soldering pattern for surface mounting SOT223.
PRINTED CIRCUIT BOARD
36
60
4.6
9
10
18
4.5
Dimensions in mm.
7
15
50
Fig.14. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).
October 1997
5
Rev 1.300

5 Page










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