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BT151X-500R PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BT151X-500R
기능 Thyristors
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BT151X-500R 데이터시트, 핀배열, 회로
Philips Semiconductors
Thyristors
Product specification
BT151X series
GENERAL DESCRIPTION
Glass passivated thyristors in a full
pack, plastic envelope, intended for
use in applications requiring high
bidirectional blocking voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT151X- 500 650 800
Repetitive peak off-state
500 650 800
voltages
Average on-state current
5.7 5.7 5.7
RMS on-state current
999
Non-repetitive peak on-state 100 100 100
current
V
A
A
A
PINNING - SOT186A
PIN DESCRIPTION
1 cathode
2 anode
3 gate
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Ths 87 ˚C
RMS on-state current
all conduction angles
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of
on-state current after
triggering
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/µs
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
5001
MAX.
-650
6501
5.7
9
100
110
50
50
2
5
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200




BT151X-500R pdf, 반도체, 판매, 대치품
Philips Semiconductors
Thyristors
Product specification
BT151X series
IGT(Tj)
3 IGT(25 C)
BT151
2.5
2
1.5
1
0.5
0
-50 0
50 100 150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
BT145
2.5
2
1.5
1
0.5
0
-50
Fig.8.
0 50 100 150
Tj / C
Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
IH(25 C)
3
BT151
2.5
2
1.5
1
0.5
0
-50
Fig.9.
0 50 100 150
Tj / C
Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
30 IT / A
Tj = 125 C
Tj = 25 C
25
Vo = 1.06 V
Rs = 0.0304 ohms
20
BT151
typ
max
15
10
5
0
0 0.5 1 1.5 2
VT / V
Fig.10. Typical and maximum on-state characteristic.
10 Zth j-hs (K/W)
BT151
without heatsink compound
1 with heatsink compound
0.1
0.01
P
D
tp
t
0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
10000 dVD/dt (V/us)
1000
100
RGK = 100 Ohms
gate open circuit
10
0 50 100 150
Tj / C
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
September 1997
4
Rev 1.200

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부품번호상세설명 및 기능제조사
BT151X-500

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BT151X-500R

Thyristors

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