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PDF BR211 Data sheet ( Hoja de datos )

Número de pieza BR211
Descripción Breakover diodes
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! BR211 Hoja de datos, Descripción, Manual

Philips Semiconductors
Breakover diodes
Product specification
BR211 series
GENERAL DESCRIPTION
A range of bidirectional, breakover
diodes in an axial, hermetically
sealed, glass envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling capability. Typical
applications include transient
overvoltage
protection
in
telecommunications equipment.
OUTLINE - SOD84
QUICK REFERENCE DATA
SYMBOL PARAMETER
V(BO)
IH
ITSM
BR211-140 to 280
Breakover voltage
Holding current
Non-repetitive peak current
MIN.
140
150
-
SYMBOL
MAX. UNIT
280 V
- mA
40 A
XXX denotes voltage grade
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
VD Continuous voltage
ITSM1
ITSM2
I2t
dIT/dt
Ptot
PTM
Tstg
Ta
Tvj
Non repetitive peak current
Non repetitive on-state current
I2t for fusing
Rate of rise of on-state current
after V(BO) turn-on
Continuous dissipation
Peak dissipation
Storage temperature
Operating ambient temperature
Overload junction temperature
10/320 µs impulse equivalent to
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
Tj = 70 ˚C prior to surge
tp = 10 ms
tp = 10 µs
Ta = 25˚C
tp = 1 ms; Ta = 25˚C
off-state
on-state
MIN.
-
-
-
-
-
-
-
-65
-
-
MAX.
75% of
V(BO)typ
40
UNIT
V
A
15 A
1.1 A2s
50 A/µs
1.2 W
50 W
150 ˚C
70 ˚C
150 ˚C
August 1996
1
Rev 1.200

1 page




BR211 pdf
Philips Semiconductors
Breakover diodes
Product specification
BR211 series
Rth e-tp
tie-point
Rth tp-a
junction
Rth j-e
envelope
Rth e-a
ambient
Fig.11. Components of thermal resistance,
Rth j
a
=
Rth j
e
+
Rth e
(Rth e
a.(Rthe tp + Rthtp a)
a + Rthe tp + Rthtp a)
50
50
72
25
3
Fig.12. Mounting on pcb used for Rth measurement.
August 1996
5
Rev 1.200

5 Page










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