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PDF BR24L02FV-W Data sheet ( Hoja de datos )
| Número de pieza | BR24L02FV-W | |
| Descripción | 256x8 bit electrically erasable PROM | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Memory ICs
BR24L02-W / BR24L02F-W / BR24L02FJ-W /
BR24L02FV-W / BR24L02FVM-W
256×8 bit electrically erasable PROM
BR24L02-W / BR24L02F-W / BR24L02FJ-W
BR24L02FV-W / BR24L02FVM-W
The BR24L02-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable.
∗ I2C BUS is a registered trademark of Philips.
zApplications
General purpose
zFeatures
1) 256 registers × 8 bits serial architecture.
2) Single power supply (1.8V to 5.5V).
3) Two wire serial interface.
4) Self-timed write cycle with automatic erase.
5) 8 byte page write mode.
6) Low power consumption.
Write (5V) : 1.2mA (Typ.)
Read (5V) : 0.2mA (Typ.)
Standby (5V) : 0.1µA (Typ.)
7) DATA security
Write protect feature (WP pin) .
Inhibit to WRITE at low VCC.
8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8
9) High reliability EEPROM with Double-Cell structure
10) High reliability fine pattern CMOS technology.
11) Endurance : 1,000,000 erase / write cycles
12) Data retention : 40 years
13) Filtered inputs in SCL•SDA for noise suppression.
14) Initial data FFh in all address.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Supply voltage
VCC −0.3 to +6.5
800 (DIP8) ∗1
450 (SOP8) ∗2
Power dissipation
Pd 450 (SOP-J8) ∗3
300 (SSOP-B8) ∗4
310 (MSOP8) ∗5
Storage temperature
Tstg −65 to +125
Operating temperature
Topr
−40 to +85
Terminal voltage
− −0.3 to VCC+0.3
∗1 Degradation is done at 8.0mW/°C for operation above 25°C.
∗2, 3 Degradation is done at 4.5mW/°C for operation above 25°C.
∗4 Degradation is done at 3.0mW/°C for operation above 25°C.
∗5 Degradation is done at 3.1mW/°C for operation above 25°C.
Unit
V
mW
°C
°C
V
1/25
1 page  
Memory ICs
BR24L02-W / BR24L02F-W / BR24L02FJ-W /
BR24L02FV-W / BR24L02FVM-W
zAC operating characteristics (Unless otherwise specified Ta=−40 to 85°C, VCC=1.8 to 5.5V)
Parameter
Clock frequency
Data clock "HIGH" period
Data clock "LOW" period
SDA and SCL rise time ∗1
SDA and SCL fall time ∗1
Start condition hold time
Start condition setup time
Input data hold time
Input data setup time
Output data delay time
Output data hold time
Stop condition setup time
Bus free time
Write cycle time
Noise spike width (SDA and SCL)
WP hold time
WP setup time
WP high period
∗1 Not 100% tested.
Symbol
fSCL
tHIGH
tLOW
tR
tF
tHD:STA
tSU:STA
tHD:DAT
tSU:DAT
tPD
tDH
tSU:STO
tBUF
tWR
tl
tHD:WP
tSU:WP
tHIGH:WP
Fast-mode
2.5V ≤ Vcc ≤ 5.5V
Min. Typ. Max.
− − 400
0.6 −
−
1.2 −
−
− − 0.3
− − 0.3
0.6 −
−
0.6 −
−
0−−
100 −
−
0.1 − 0.9
0.1 −
−
0.6 −
−
1.2 −
−
−−5
− − 0.1
0−−
0.1 −
−
1.0 −
−
Standard-mode
1.8V ≤ Vcc ≤ 5.5V
Min. Typ. Max.
− − 100
4.0 −
−
4.7 −
−
− − 1.0
− − 0.3
4.0 −
−
4.7 −
−
0−−
250 −
−
0.2 − 3.5
0.2 −
−
4.7 −
−
4.7 −
−
−−5
− − 0.1
0−−
0.1 −
−
1.0 −
−
Unit
kHz
µs
µs
µs
µs
µs
µs
ns
ns
µs
µs
µs
µs
ms
µs
ns
µs
µs
5/25
5 Page 
Memory ICs
BR24L02-W / BR24L02F-W / BR24L02FJ-W /
BR24L02FV-W / BR24L02FVM-W
zCurrent read
S
TR
AE
R SLAVE A
T
ADDRESS
D
DATA
S
T
O
P
SDA
LINE
1 0 1 0 A2 A1 A0
D7
D0
RA
/C
WK
A
C
K
Fig.10 CURRENT READ CYCLE TIMING
• In case that the previous operation is Random or Current Read (which includes Sequential Read respectively), the
internal address counter is increased by one from the last accessed address (n).
Thus Current Read outputs the data of the next word address (n+1).
If the last command is Byte or Page Write, the internal address counter stays at the last address (n).
Thus Current Read outputs the data of the word address (n).
• If an Acknowledge is detected, and no STOP condition is generated by the master (µ-COM), the device will continue
to transmit the data. [ It can transmit all data (2kbit 256word) ]
• If an Acknowledge is not detected, the device will terminate further data transmissions and await a STOP condition
before returning to the standby mode.
Note) If an Acknowledge is detected with “Low” level, not “High” level, command will become Sequential Read.
So the device transmits the next data, Read is not terminated. In the case of terminating Read, input
Acknowledge with “High” always, then input stop condition.
zRandom read
S
T
A
R
T
SLAVE
ADDRESS
W
R
I
T
E
WORD
ADDRESS(n)
S
TR
AE
R SLAVE A
T ADDRESS D
DATA(n)
S
T
O
P
SDA
LINE
1 0 1 0 A2A1A0
WA
7
WA
0
1 0 1 0 A2A1A0
D7
D0
RA A RA A
/C C /C C
WK K WK K
Fig.11 RANDOM READ CYCLE TIMING
• Random read operation allows the master to access any memory location indicated word address.
• If an Acknowledge is detected, and no STOP condition is generated by the master (µ-COM), the device will continue to
transmit the data. [ It can transmit all data (2kbit 256word) ]
• If an Acknowledge is not detected, the device will terminate further data transmissions and await a STOP condition
before returning to the standby mode.
Note) If an Acknowledge is detected with “Low” level, not “High” level, command will become Sequential Read.
So the device transmits the next data, Read is not terminated. In the case of terminating Read, input
Acknowledge with “High” always, then input stop condition.
11/25
11 Page | ||
| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet BR24L02FV-W.PDF ] | |
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