DataSheet.es    


PDF BR2508W Data sheet ( Hoja de datos )

Número de pieza BR2508W
Descripción SILICON BRIDGE RECTIFIERS
Fabricantes EIC discrete Semiconductors 
Logotipo EIC discrete Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de BR2508W (archivo pdf) en la parte inferior de esta página.


Total 2 Páginas

No Preview Available ! BR2508W Hoja de datos, Descripción, Manual

BR2500W - BR2510W SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
BR50W
0.732 (18.6)
0.692 (17.5)
1.130 (28.7)
1.120 (28.4)
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
0.042 (1.06)
0.038 (0.96)
0.310 (7.87)
0.280(7.11)
1.2 (30.5)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR BR BR BR BR BR BR UNIT
2500W 2501W 2502W 2504W 2506W 2508W 2510W
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C
IF(AV)
25 Amp.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
I2t
300 Amp.
375 A2S
Maximum Forward Voltage per Diode at 12.5 Amp.
VF
1.1 Volts
Maximum DC Reverse Current
Ta = 25 °C
IR
10 µA
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance at Junction to Case ( Note 1 )
Typical Thermal Resistance at Junction to Ambient
IR(H)
RθJC
RθJA
1.0 mA
2 °C/W
22 °C/W
Operating Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes : 1 ) Thermal resistance from Junction to Case with units mounted on a 5" x 4" x 3" ( 12.7 x 10.2 x 7.3 cm ) Al.-wing plate.
UPDATE : APRIL 21, 1998

1 page





PáginasTotal 2 Páginas
PDF Descargar[ Datasheet BR2508W.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BR2508SILICON BRIDGE RECTIFIERSEIC discrete Semiconductors
EIC discrete Semiconductors
BR2508(BR25005 - BR2510) SILICON BRIDGE RECTIFIERSGalaxy Semi-Conductor
Galaxy Semi-Conductor
BR2508(BR25005 - BR2510) Silicon Bridge RectifiersLuguang Electronic
Luguang Electronic
BR2508(BR25005 - BR2510) Silicon Bridge RectifiersGalaxy Microelectronics
Galaxy Microelectronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar