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부품번호 | BR5002 기능 |
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기능 | SILICON BRIDGE RECTIFIERS | ||
제조업체 | EIC discrete Semiconductors | ||
로고 | |||
전체 2 페이지수
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
BR5000 - BR5010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 50 Amperes
0.728(18.50)
0.688(17.40)
BR50
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* High efficiency
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.570(14.50)
0.530(13.40)
0.685(16.70)
0.618(15.70)
1.130(28.70)
1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ
0.310(7.87)
0.280(7.11)
0.905(23.0)
0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
0.100(2.50)
0.090(2.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF=25 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
I2t
VF
IR
IR(H)
RθJC
TJ
TSTG
BR5000
50
35
50
BR5001
100
70
100
BR5002
200
140
200
BR5004
400
280
400
50
BR5006
600
420
600
500
660
1.1
10
200
1.0
- 40 to + 150
- 40 to + 150
BR5008
800
560
800
BR5010
1000
700
1000
UNIT
Volts
Volts
Volts
Amps.
Amps.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.
UPDATE : JUNE 2, 1999
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구 성 | 총 2 페이지수 | ||
다운로드 | [ BR5002.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BR5000 | Bridge Rectifier | Formosa MS |
BR5000 | SILICON BRIDGE RECTIFIERS | EIC discrete Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |