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PDF BR9016ARFVM-W Data sheet ( Hoja de datos )

Número de pieza BR9016ARFVM-W
Descripción 8k/ 16k bit EEPROMs for direct connection to serial ports
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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No Preview Available ! BR9016ARFVM-W Hoja de datos, Descripción, Manual

Memory ICs
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
8k, 16k bit EEPROMs for direct
connection to serial ports
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
The BR9080A and BR9016A series are serial EEPROMs that can be connected directly to a serial port and can be
erased and written electrically. Writing and reading is performed in word units, using four types of operation commands.
Communication occurs though CS, SK, DI, and DO pins, WC pin control is used to initiate a write disabled state, enabling
these EEPROMs to be used as one-time ROMs. During writing, operation is checked via the internal status check.
!Applications
Movie, camera, cordless telephones, car stereos, VCRs, TVs, DIP switches, and other battery-powered equipment
requiring low voltage and low current
!Features
1) BR9080AF-W / ARFV-W / ARFVM-W (8k bit) : 512 words ×16 bits
BR9016AF-W / ARFV-W / ARFVM-W (16k bit) : 1024 words × 16bits
2) Single power supply operation
3) Serial data input and output
4) Automatic erase-before-write
5) Low current consumption
Active (5V) : 5mA (max.)
Standby (5V) : 3µA (max.)
6) Noise filter built into SK pin
7) Write protection when VCC is low
Inhibition on inadvertant write with the WC pin.
8) SOP8 / SSOP-B8 / MSOP8
9) High reliability CMOS process
10) 100,000 ERASE / WRITE cycles
11) 10 years Data Retention
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BR9016ARFVM-W pdf
Memory ICs
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
!Operating timing characteristics
BR9080AF-W / ARFV-W / ARFVM-W, BR9016AF-W / ARFV-W / ARFVM-W
(Unless otherwise noted, Ta=4085°C, VCC=2.7V5.5V)
Parameter
Symbol Min. Typ. Max. Unit
CS setup time
fCSS 100
ns
CS hold time
tCSH 100
ns
Data setup time
tDIS 100
ns
Data hold time
tDIH 100
ns
DO rise delay time
tPD1
150 ns
DO fall delay time
tPD0
150 ns
Self-timing programming cycle
tE / W
10 ms
CS minimum high level time
tCS 250
ns
READY / BUSY display valid time
tSV
150 ns
Time when DO goes HIGH-Z (via CS)
tOH 0
150 ns
Data clock high level time
tWH 230
ns
Data clock low level time
tWL 230
ns
Write control setup time
tWCS
0
ns
Write control hold time
tWCH
0
ns
!Timing chart
Synchronous Data Input Output Timing
CS
tCSS
SK
tWL
tDIS
DI
tPD
DO
tWH
tDIH
tCSH
tPD tOH
tCS
WC
Fig.2
· Input data are clocked in to DI at the rising edge of the clock (SK).
· Output data will toggle on the falling edge of the SK clock.
· The WC pin does not have any effect on the READ, EWEN and EWDS operations.
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BR9016ARFVM-W arduino
Memory ICs
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
(3) Canceling modes
1) Read commands
SK 32 Clock
CS
DI
Start bit
Operating code
Address
4 bits
4 bits
8 bits
16 bits
DO DO Data
Cancel can be performed for the entire read mode space
WC HIGH or LOW
Cancellation method: CS HIGH
Fig.10
D15
2) Write commands
SK
32 Clock
CS
DI
R/B
WC
Start bit Operating code Address
4 bits
4 bits
8 bits
DO Data D15
16 bits
tE / W
ab
c
d
Fig.11
Canceling methods
a : Canceled by setting CS HIGH. The WC pin is not involved.
b : If the WC pin goes HIGH for even a second, writing is forcibly interrupted. Cancellation occurs even if the CS pin is
HIGH. At this point, data has not been written to the memory, so the data in the designated address has not yet
been changed.
c : The operation is forcibly canceled by setting the WC pin to HIGH or turning off the power supply (although we do
not recommend using this method). The data in the designated address is not guaranteed and should be written
once again.
d : If CS is set to HIGH while the R / B signal is HIGH (following the tE / W timing), the IC is reset internally, and waits
for the next command to be input.
11/12

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