BR9080ARFVM-W Datasheet PDF - ROHM Semiconductor
| Part Number | BR9080ARFVM-W | |
| Description | 8k/ 16k bit EEPROMs for direct connection to serial ports | |
| Manufacturers | ROHM Semiconductor | |
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Memory ICs
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
8k, 16k bit EEPROMs for direct
connection to serial ports
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
The BR9080A and BR9016A series are serial EEPROMs that can be connected directly to a serial port and can be
erased and written electrically. Writing and reading is performed in word units, using four types of operation commands.
Communication occurs though CS, SK, DI, and DO pins, WC pin control is used to initiate a write disabled state, enabling
these EEPROMs to be used as one-time ROMs. During writing, operation is checked via the internal status check.
!Applications
Movie, camera, cordless telephones, car stereos, VCRs, TVs, DIP switches, and other battery-powered equipment
requiring low voltage and low current
!Features
1) BR9080AF-W / ARFV-W / ARFVM-W (8k bit) : 512 words ×16 bits
BR9016AF-W / ARFV-W / ARFVM-W (16k bit) : 1024 words × 16bits
2) Single power supply operation
3) Serial data input and output
4) Automatic erase-before-write
5) Low current consumption
Active (5V) : 5mA (max.)
Standby (5V) : 3µA (max.)
6) Noise filter built into SK pin
7) Write protection when VCC is low
Inhibition on inadvertant write with the WC pin.
8) SOP8 / SSOP-B8 / MSOP8
9) High reliability CMOS process
10) 100,000 ERASE / WRITE cycles
11) 10 years Data Retention
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Memory ICs
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
!Operating timing characteristics
BR9080AF-W / ARFV-W / ARFVM-W, BR9016AF-W / ARFV-W / ARFVM-W
(Unless otherwise noted, Ta=−40∼85°C, VCC=2.7V∼5.5V)
Parameter
Symbol Min. Typ. Max. Unit
CS setup time
fCSS 100
−
− ns
CS hold time
tCSH 100
−
− ns
Data setup time
tDIS 100
−
− ns
Data hold time
tDIH 100
−
− ns
DO rise delay time
tPD1 −
− 150 ns
DO fall delay time
tPD0 −
− 150 ns
Self-timing programming cycle
tE / W
−
− 10 ms
CS minimum high level time
tCS 250
−
− ns
READY / BUSY display valid time
tSV −
− 150 ns
Time when DO goes HIGH-Z (via CS)
tOH 0
− 150 ns
Data clock high level time
tWH 230
−
− ns
Data clock low level time
tWL 230
−
− ns
Write control setup time
tWCS
0
−
− ns
Write control hold time
tWCH
0
−
− ns
!Timing chart
Synchronous Data Input Output Timing
CS
tCSS
SK
tWL
tDIS
DI
tPD
DO
tWH
tDIH
tCSH
tPD tOH
tCS
WC
Fig.2
· Input data are clocked in to DI at the rising edge of the clock (SK).
· Output data will toggle on the falling edge of the SK clock.
· The WC pin does not have any effect on the READ, EWEN and EWDS operations.
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BR9080ARFVM-W electronic component. |
| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BR9080ARFVM-W.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| BR9080ARFVM-W | The function is 8k/ 16k bit EEPROMs for direct connection to serial ports. ROHM Semiconductor | |
| BR9080ARFVM-W | The function is 8k/ 16k bit EEPROMs for direct connection to serial ports. ROHM Semiconductor | |
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