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부품번호 | BRS212-160 기능 |
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기능 | Breakover diodes | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
Philips Semiconductors
Breakover diodes
Product specification
BRS212 series
GENERAL DESCRIPTION
A range of bidirectional, breakover
diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling capability. Their intended
application is protection of line based
telecommunications
equipment
against voltage transients.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V(BO)
Breakover voltage
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
IH Holding current
IPP Non-repetitive peak pulse
current (CCITT K17)
MIN. TYP. MAX. UNIT
- 140 -
V
- 160 -
V
- 180 -
V
- 200 -
V
- 220 -
V
- 240 -
V
- 260 -
V
- 280 -
V
150 -
- mA
- - 40 A
OUTLINE - SOD106
date code
XXX denotes voltage grade
SYMBOL
YM
212
XXX
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
VD
IPP
ITSM
I2t
dIT/dt
Ptot
PTM
Tstg
Tj
TL
Continuous voltage
Non-repetitive peak pulse
current
Non repetitive surge peak
on-state current
I2t for fusing
Rate of rise of on-state current
after V(BO) turn-on
Continuous dissipation on
infinite heatsink
Peak dissipation
Storage temperature
Operating junction temperature
Maximum terminal temperature
for soldering
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
5/310 µs impulse equivalent to
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
Tj = 70 ˚C prior to surge
tp = 10 ms
tp = 10 µs
Tsp = 50˚C
tp = 1 ms; Ta = 25˚C
soldering time = 10 s
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- 40
-
-
MAX.
105
120
135
150
165
180
195
210
40
UNIT
V
V
V
V
V
V
V
V
A
15 A
1.1 A2s
50 A/µs
4W
50 W
150 ˚C
150 ˚C
260 ˚C
January 1997
1
Rev 1.000
Philips Semiconductors
Breakover diodes
Product specification
BRS212 series
10 IS / A
1 max
typ
0.1
0.01 min
0.001
-50
0
50 100
150
Tj / C
Fig.7. Switching current as a function of junction
temperature.
10 IH / A
1
min
0.1
0.01
0.001
-50
0
50 100
150
Tj / C
Fig.8. Minimum holding current as a function of
temperature.
Cj / pF
100
10
typ
BR211-140
BR211-280
1
1 10 100 1000
VD / V
Fig.9. Typical junction capacitance as a function of
off-state voltage, f = 1 MHz; Tj = 25˚C.
1000Zth / (K/W)
BR211
100
10
1 PD tp
0.110us
1ms
0.1s
t
10s
1000s
tp / s
Fig.10. Transient thermal impedance. Zth j-a = f(tp).
January 1997
4
Rev 1.000
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부품번호 | 상세설명 및 기능 | 제조사 |
BRS212-160 | Breakover diodes | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |