PDF BRY39 Data sheet ( Hoja de datos )

Número de pieza	BRY39
Descripción	Programmable unijunction transistor/ Silicon controlled switch
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET M3D082 BRY39 Programmable unijunction transistor/ Silicon controlled switch Product speciﬁcation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 24 1 page Philips Semiconductors Programmable unijunction transistor/ Silicon controlled switch Product speciﬁcation BRY39 SYMBOL PARAMETER SWITCHING TIMES ton turn-on time toff turn-off time Programmable unijunction transistor Ip peak point current Iv valley point current Voffset IGAO IGKS VAK VOM tr offset voltage gate-anode leakage current gate-cathode leakage current anode-cathode voltage peak output voltage rise time CONDITIONS MIN. MAX. UNIT VKG-K = −0.5 to 4.5 V; RKG-K = 1 kΩ; see Figs 15 and 16 VKG-K = −0.5 to 0.5 V; RKG-K = 10 kΩ RKG-K = 10 kΩ; see Figs 17 and 18 − − − VS = 10 V; RG = 10 kΩ; see Figs 3 and 8 VS = 10 V; RG = 100 kΩ; see Figs 3 and 8 VS = 10 V; RG = 10 kΩ; see Figs 3 and 8 VS = 10 V; RG = 100 kΩ; see Figs 3 and 8 typical curve; IA = 0; for VP and VS see Fig.8 IK = 0; VGA = 70 V VAK = 0; VKG = 70 V IA = 100 mA VAA = 20 V; C = 10 nF; see Figs 9 and 11 VAA = 20 V; C = 10 nF; see Fig.11 − − − − − − − − 6 − 0.25 µs 1.5 µs 15 µs 0.2 µA 0.06 µA 2 µA 1 µA −V 10 nA 100 nA 1.4 V −V 80 ns Explanation of symbols For application of the BRY39 as a programmable unijunction transistor, only the anode gate is used. To simplify the symbols, the term gate instead of anode gate will be used (see Fig.2). handbook, halfpage anode a g gate k cathode MBB700 Fig.2 Programmable unijunction transistor explanation of symbols. 1997 Jul 24 5 5 Page Philips Semiconductors Programmable unijunction transistor/ Silicon controlled switch Product speciﬁcation BRY39 handboo3k,0h0alfpage P tot (mW) 200 MBB580 100 0 0 50 150 150 Tamb ( o C) Fig.23 Silicon controlled switch power derating curve. handbook, full1p0ag4ewidth Z thj-a (K/W) 103 102 MBB582 10 1 10 5 10 4 10 3 10 2 10 1 1 10 10 2 10 3 10 4 t p (s) Fig.24 Silicon controlled switch thermal impedance as a function of pulse duration. 1997 Jul 24 11 11 Page

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