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BRY39 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BRY39
기능 Programmable unijunction transistor/ Silicon controlled switch
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BRY39 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D082
BRY39
Programmable unijunction
transistor/
Silicon controlled switch
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 24




BRY39 pdf, 반도체, 판매, 대치품
Philips Semiconductors
Programmable unijunction transistor/
Silicon controlled switch
Product specification
BRY39
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
IARM
IASM
dIA/dt
repetitive peak anode current
non-repetitive peak anode current
rate of rise of anode current
tp = 10 µs; δ = 0.01
tp = 10 µs; Tj = 150 °C
IA 2.5 A
2.5 A
3A
20 A/µs
Notes
1. Provided the IE rating is not exceeded.
2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This
capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series
resistance of 100 k.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air
VALUE
450
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Silicon controlled switch
INDIVIDUAL PNP TRANSISTOR
ICEO
IEBO
hFE
collector cut-off current
emitter cut-off current
DC current gain
INDIVIDUAL NPN TRANSISTOR
ICER collector cut-off current
IEBO
VCEsat
VBEsat
hFE
Cc
Ce
fT
emitter cut-off current
collector-emitter saturation voltage
base-emitter saturation voltage
DC current gain
collector capacitance
emitter capacitance
transition frequency
COMBINED DEVICE
VAK forward on-state voltage
IH holding current
IB = 0; VCE = 70 V; Tj = 150 °C
IC = 0; VEB = 70 V; Tj = 150 °C
IE = 1 mA; VCE = 5 V
3
VCE = 70 V; RBE = 10 k
VCE = 70 V; RBE = 10 k; Tj = 150 °C
IC = 0; VEB = 5 V; Tj = 150 °C
IC = 10 mA; IB = 1 mA
IC = 10 mA; IB = 1 mA
IC = 10 mA; VCE = 2 V
50
IE = ie = 0; VCB = 20 V
IC = ic = 0; VEB = 1 V; f = 1 MHz
IC = 10 mA; VCE = 2 V; f = 100 MHz 100
RKG-K = 10 k
IA = 50 mA; IAG = 0
IA = 50 mA; IAG = 0; Tj = 55 °C
IA = 1 mA; IAG = 10 mA
VBB = 2 V; IAG = 10 mA;
RKG-K = 10 k; see Fig.14
MAX. UNIT
10 µA
10 µA
15
100 nA
10 µA
10 µA
0.5 V
0.9 V
5 pF
25 pF
MHz
1.4 V
1.9 V
1.2 V
1 mA
1997 Jul 24
4

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BRY39 전자부품, 판매, 대치품
Philips Semiconductors
Programmable unijunction transistor/
Silicon controlled switch
Product specification
BRY39
handbook, halfpage
DUT
I GKS
VGK
MBB696
Fig.7 Programmable unijunction transistor
equivalent test circuit for gate-cathode
leakage current.
handbook, halfpaIgAe
I(V)
I(P)
VS V(P)
VAK
MEA143
Fig.8 Programmable unijunction transistor
offset voltage.
handbook, halfpage
VAA
1.5
M
DUT
16 k
C VO
20 27 k
MBB698
handbookV, hOalfpage
VOM
90 %
10 %
tr
MBB701
time
Fig.9 Programmable unijunction transistor test
circuit for peak output voltage.
Fig.10 Programmable unijunction transistor peak
output voltage.
1997 Jul 24
7

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Programmable unijunction transistor/ Silicon controlled switch

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