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PDF BRY55-200 Data sheet ( Hoja de datos )
| Número de pieza | BRY55-200 | |
| Descripción | SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
PNPN devices designed for high volume, line-powered consumer applications such
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and
sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92)
package which is readily adaptable for use in automatic insertion equipment.
• Sensitive Gate Trigger Current — 200 µA Maximum
• Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 125°C
• Low Holding Current — 5 mA Maximum
• Glass-Passivated Surface for Reliability and Uniformity
Order this document
by BRY55-30/D
BRY55-30*
thru 600*
SCRs
0.8 AMPERE RMS
30 TO 600 VOLTS
CASE 29-04
(TO-226AA)
STYLE 3
WITH TO-18 LEADFORM*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(RGK = 1000 Ω, TJ = 25 to 125°C)
Marking: BRY55-1 . . . BRY55-30
-2 . . . BRY55-60
-3 . . . BRY55-100
-4 . . . BRY55-200
-6 . . . BRY55-400
-7 . . . BRY55-500
-8 . . . BRY55-600
Symbol
VRRM, VDRM
Value
30
60
100
200
400
500
600
Unit
Volts
Forward Current RMS (All Conduction Angles)
Peak Forward Surge Current, TA = 25°C
(1/2 Cycle, Sine Wave, 60 Hz)
IT(RMS)
ITSM
0.8
8
Amp
Amps
Circuit Fusing Considerations, TA = 25°C
(t = 8.3 ms)
I2t 0.15 A2s
Peak Gate Power — Forward, TA = 25°C
Peak Gate Current Forward, TA = 25°C
(300 µs, 120 PPS)
PGM
IGFM
0.1
1
Watt
Amp
Peak Gate Voltage — Reverse
Operating Junction Temperature Range @ Rated VRRM and VDRM
Storage Temperature Range
tLead Solder Temperature ( 1.5 mm from case, 10 s max.)
VGRM
TJ
Tstg
5
–40 to +125
–40 to +150
+230
Volts
°C
°C
°C
*European part numbers only. Package is Case 29 with Leadform 18.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BRY55-200.PDF ] | |
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