|
|
PDF BS616LV4020BI Data sheet ( Hoja de datos )
| Número de pieza | BS616LV4020BI | |
| Descripción | Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable | |
| Fabricantes | Brilliance Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BS616LV4020BI (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
BSI Very Low Power/Voltage CMOS SRAM
256K x 16 or 512K x 8 bit switchable BS616LV4020
FEATURES
• Very low operation voltage : 2.7 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc=3.0V
-10 100ns (Max.) at Vcc=3.0V
•Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
DESCRIPTION
The BS616LV4020 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits or
524,288 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.5uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW output
enable(OE) and three-state output drivers.
The BS616LV4020 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV4020 is available in DICE form and 48-pin BGA type.
PRODUCT FAMILY
PRODUCT FAMILY
OPERATING
TEMPERATURE
Vcc RANGE
BS616LV4020DC
BS616LV402 0AC
BS616LV4020BC
BS616LV4020DI
BS616LV4020AI
BS616LV4020BI
+0 O C to +70 O C
-40 O C to +85 O C
PIN CONFIGURATION
2.7V ~ 3.6V
2.7V ~ 3.6V
SPEED
(ns)
Vcc=3.0V
70 / 100
POWER DISSIPATION
STANDBY
Operating
(ICCSB1, Max)
(ICC, Max)
Vcc=3.0V
Vcc=3.0V
8uA 20mA
70 / 100
12uA
BLOCK DIAGRAM
25mA
PKG TYPE
DICE
BGA-48-0608
BGA-48-0810
DICE
BGA-48-0608
BGA-48-0810
A15
A14
A13
A12
A11
A10
A9
A8
A17
A7
A6
D0
.
.
.
.
D15
Address
Input
Buffer
22
Row
2048
Decoder
16(8)
.
.
. 16(8)
.
Data
Input
Buffer
16(8)
16(8)
Data
Output
Buffer
Memory Array
2048 x 2048
2048
Column I/O
Write Driver
Sense Amp
128(256)
Column Decoder
CE1
CE2
WE
OE
UB
LB
CIO
Vdd
Vss
Control
14(16)
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5 (SAE)
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616LV4020
1
Revision 2.3
April 2002
1 page  
BSI
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
VDR
Vcc for Data Retention
CE1 Њ Vcc - 0.2V or CE2 Љ 0.2V ;
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
ICCDR
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
tR Operation Recovery Time
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
CE1 Њ Vcc - 0.2V or CE2 Љ 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
See Retention Waveform
BS616LV4020
MIN. TYP. (1) MAX.
1.5 --
--
UNITS
V
-- 0.3
0
TRC (2)
--
--
2
--
--
uA
ns
ns
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Vcc
CE1
Vcc
t CDR
VIH
Data Retention Mode
VDR Њ 1.5V
CE1 Њ Vcc - 0.2V
Vcc
tR
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Vcc
CE2
Vcc
t CDR
VIL
Data Retention Mode
VDR Њ 1.5V
CE2 Љ 0.2V
Vcc
tR
VIL
R0201-BS616LV4020
5
Revision 2.3
April 2002
5 Page 
BSI
PACKAGE DIMENSIONS (continued)
SIDE VIEW
D 0.1
D1
BS616LV4020
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
ND
48 10.0
E D1 E1 e
8.0 5.25 3.75 0.75
SOLDER BALL 0.35̈́ 0.05
VIEW A
48 mini-BGA (8 x 10mm)
R0201-BS616LV4020
11
Revision 2.3
April 2002
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BS616LV4020BI.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BS616LV4020BC | Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable | Brilliance Semiconductor |
| BS616LV4020BI | Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable | Brilliance Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |