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BS616LV8022BC 데이터시트 PDF




Brilliance Semiconductor에서 제조한 전자 부품 BS616LV8022BC은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 BS616LV8022BC 기능
기능 Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
제조업체 Brilliance Semiconductor
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BS616LV8022BC 데이터시트, 핀배열, 회로
BSI Very Low Power/Voltage CMOS SRAM
512K x 16 or 1M x 8 bit switchable
BS616LV8022
„ FEATURES
• Very low operation voltage : 2.4 ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 45mA (Max.) operating current
I-grade : 50mA (Max.) operating current
3uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc= 3.0V
-10 100ns (Max.) at Vcc= 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
„ PRODUCT FAMILY
„ DESCRIPTION
The BS616LV8022 is a high performance, very low power CMOS Static
Random Access Memory organized as 524,288 words by 16 bits or
1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.5uA and maximum access time of 70/100ns in 3.0V operation.
Easy memory expansion is provided by an active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW output
enable(OE) and three-state output drivers.
The BS616LV8022 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV8022 is available in 48-pin BGA type.
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
(ns)
Vcc=3.0V
POWER DISSIPATION
STANDBY
Operating
(ICCSB1, Max)
(ICC, Max)
Vcc=3V Vcc=5V Vcc=3V Vcc=5V
PKG TYPE
BS616LV8022BC +0OC to +70OC 2.4V ~ 5.5V 70 / 100 3uA 30uA 20mA 45mA
BGA-48-0810
BS616LV8022BI -40OC to +85OC 2.4V ~ 5.5V 70 / 100 6uA 100uA 25mA 50mA
BGA-48-0810
„ PIN CONFIGURATIONS
„ BLOCK DIAGRAM
123456
A LB OE A0 A1 A2 CE2
B D8 UB A3 A4 CE1 D0
C D9 D10 A5 A6 D1 D2
D VSS D11 A17 A7 D3 VCC
E VCC D12 VSS A16 D4 VSS
F D14 D13 A14 A15 D5 D6
G D15 CI.O A12 A13 WE D7
H A18 A8 A9 A10 A11 SAE.
48-Ball CSP top View
A15
A14
A13
A12
A11
A10
A9
A8
A17
A7
A6
D0
.
.
.
.
D15
Address
Input
Buffer
22
Row
2048
Decoder
16(8)
.
.
. 16(8)
.
Data
Input
Buffer
16(8)
16(8)
Data
Output
Buffer
Memory Array
2048 x 4096
4096
Column I/O
Write Driver
Sense Amp
256(512)
Column Decoder
CE1
CE2
WE
OE
UB
LB
CIO
Vdd
Vss
Control
16(18)
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5 A18 (SAE)
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616LV8022
1
Revision 2.4
April 2002




BS616LV8022BC pdf, 반도체, 판매, 대치품
BSI
„ DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER
NAME
VIL
VIH
PARAMETER
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(2)
TEST CONDITIONS
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
IIL Input Leakage Current Vcc = Max, VIN = 0V to Vcc
IOL
VOL
VOH
ICC
ICCSB
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
Vcc = Max, CE1 = VIH , or CE2 = ViL, or
OE = VIH, VI/O = 0V to Vcc
Vcc= max, IOL = 2mA
Vcc= Min, IOH = -1mA
Vcc= max, CE1 = VIL and CE2 =
VIH, IDQ = 0mA, F = Fmax(3)
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
Vcc= max, CE1 = VIH or CE2 =
VIL, IDQ = 0mA
Vcc=3V
Vcc=5V
ICCSB1
Standby Current-CMOS
Vcc= max,CE1 Њ Vcc-0.2V, or
CE2 Љ 0.2V; VIN Њ Vcc - 0.2V
or VIN Љ 0.2V
Vcc=3V
Vcc=5V
BS616LV8022
MIN. TYP. (1) MAX.
-0.5 --
0.8
-0.5 --
0.8
2.0 -- Vcc+0.2
2.2 -- Vcc+0.2
-- --
1
-- --
-- --
-- --
2.4 --
2.4 --
-- --
-- --
-- --
-- --
-- 0.5
1
0.4
0.4
--
--
20
45
1
2
3
-- 3
30
UNITS
V
V
uA
uA
V
V
mA
mA
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/ tRC .
R0201-BS616LV8022
4
Revision 2.4
April 2002

4페이지










BS616LV8022BC 전자부품, 판매, 대치품
BSI
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
ADDRESS
D OUT
READ CYCLE2 (1,3,4)
t OH t AA
CE2
CE1
D OUT
t ACS2
t ACS1
t (5)
CLZ
t RC
READ CYCLE3 (1,4)
ADDRESS
OE
CE2
CE1
LB,UB
t RC
t AA
t OE
t ACS2
t OLZ
t ACS1
t (5)
CLZ
t BE
t BA
D OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2 = VIH.
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.
4. OE = VIL .
5. Transition is measured ± 500mV from steady state with CL = 30pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
BS616LV8022
t OH
t CH(Z5)
t OH
t (5)
OHZ
t (1,5)
CHZ
t BDO
R0201-BS616LV8022
7
Revision 2.4
April 2002

7페이지


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관련 데이터시트

부품번호상세설명 및 기능제조사
BS616LV8022BC

Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

Brilliance Semiconductor
Brilliance Semiconductor
BS616LV8022BI

Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

Brilliance Semiconductor
Brilliance Semiconductor

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