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PDF BS616UV1620BC Data sheet ( Hoja de datos )
| Número de pieza | BS616UV1620BC | |
| Descripción | Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable | |
| Fabricantes | Brilliance Semiconductor | |
| Logotipo |  |
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BSI Ultra Low Power/Voltage CMOS SRAM
1M x 16 or 2M x 8 bit switchable
BS616UV1620
FEATURES
• Ultra low operation voltage : 1.8 ~ 2.3V
• Ultra low power consumption :
Vcc = 1.8V C-grade : 25mA (Max.) operating current
I- grade : 30mA (Max.) operating current
1.2uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc = 2.0V
-10 100ns (Max.) at Vcc = 2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
PRODUCT FAMILY
DESCRIPTION
The BS616UV1620 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 1,048,676 words by 16 bits or
2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide
range of 1.8V to 2.3V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 1.2uA and maximum access time of 70/100ns in 2.0V operation.
This device provide three control inputs and three states output drivers
for easy memory expansion.
The BS616UV1620 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV1620 is available in DICE form and 48-pin BGA type.
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc RANGE
BS616UV1620BC
BS616UV1620FC
BS616UV1620BI
BS616UV1620FI
+0 O C to +70 O C
-40 O C to +85 O C
1.8V ~ 2.3V
1.8V ~ 2.3V
SPEED
(ns)
Vcc=2.0V
70 / 100
70 / 100
POWER DISSIPATION
STANDBY
Operating
(ICCSB1, Max)
(ICC, Max)
Vcc=2.0V
Vcc=2.0V
30uA
25mA
40uA
30mA
PKG TYPE
BGA-48-0810
BGA-48-0912
BGA-48-0810
BGA-48-0912
PIN CONFIGURATIONS
BLOCK DIAGRAM
123456
A LB OE A0 A1 A2 CE2
B D8 UB A3 A4 CE1 D0
C D9 D10 A5 A6 D1 D2
D VSS D11 A17 A7 D3 VCC
E VCC D12 A19 A16 D4 VSS
F D14 D13 A14 A15 D5 D6
G D15 CI.O A12 A13 WE D7
H A18 A8 A9 A10 A11 SAE.
48-Ball CSP top View
A19
A15
A14
A13
A12
A11
A10
A9
A8
A17
A7
A6
D0
.
.
.
.
D15
Address
Input
Buffer
24
Row
4096
Decoder
16(8)
.
.
. 16(8)
.
Data
Input
Buffer
16(8)
16(8)
Data
Output
Buffer
Memory Array
4096 x 4096
4096
Column I/O
Write Driver
Sense Amp
256(512)
Column Decoder
CE1
CE2
WE
OE
UB
LB
CIO
Vdd
Vss
Control
16(18)
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5 A18 (SAE)
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616UV1620
1
Revision 2.2
April 2001
1 page  
BSI
BS616UV1620
DATA RETENTION CHARACTERISTICS ( TA = 0oC to +70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
VDR Vcc for Data Retention
CE1 Њ Vcc - 0.2V or CE2 Љ 0.2V or
LB Њ Vcc - 0.2V and UB Њ Vcc - 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
ICCDR
Data Retention Current
CE1 Њ Vcc - 0.2V or CE2 Љ 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
tCDR
Chip Deselect to Data
Retention Time
See Retention Waveform
tR Operation Recovery Time
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
MIN. TYP. (1) MAX.
1.5 --
--
-- 0.8 15
0
TRC (2)
--
--
--
--
UNITS
V
uA
ns
ns
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Vcc
CE1
Vcc
t CDR
VIH
Data Retention Mode
VDR Њ 1.5V
CE1 Њ Vcc - 0.2V
Vcc
tR
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Vcc
CE2
Vcc
t CDR
VIL
Data Retention Mode
VDR Њ 1.5V
CE2 Љ 0.2V
Vcc
tR
VIL
R0201-BS616UV1620
5
Revision 2.2
April 2001
5 Page 
BSI
PACKAGE DIMENSIONS (continued)
3.375
SIDE VIEW
D 0.1
D1
BS616UV1620
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
N D E D1 E1 e
48 12.0 9.0 5.25 3.75 0.75
SOLDER BALL 0.35̈́0.05
VIEW A
48 mini-BGA (9 x 12mm)
R0201-BS616UV1620
11
Revision 2.2
April 2001
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BS616UV1620BC.PDF ] | |
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