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부품번호 | BS616UV1620BI 기능 |
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기능 | Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable | ||
제조업체 | Brilliance Semiconductor | ||
로고 | |||
BSI Ultra Low Power/Voltage CMOS SRAM
1M x 16 or 2M x 8 bit switchable
BS616UV1620
FEATURES
• Ultra low operation voltage : 1.8 ~ 2.3V
• Ultra low power consumption :
Vcc = 1.8V C-grade : 25mA (Max.) operating current
I- grade : 30mA (Max.) operating current
1.2uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc = 2.0V
-10 100ns (Max.) at Vcc = 2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
PRODUCT FAMILY
DESCRIPTION
The BS616UV1620 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 1,048,676 words by 16 bits or
2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide
range of 1.8V to 2.3V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 1.2uA and maximum access time of 70/100ns in 2.0V operation.
This device provide three control inputs and three states output drivers
for easy memory expansion.
The BS616UV1620 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV1620 is available in DICE form and 48-pin BGA type.
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc RANGE
BS616UV1620BC
BS616UV1620FC
BS616UV1620BI
BS616UV1620FI
+0 O C to +70 O C
-40 O C to +85 O C
1.8V ~ 2.3V
1.8V ~ 2.3V
SPEED
(ns)
Vcc=2.0V
70 / 100
70 / 100
POWER DISSIPATION
STANDBY
Operating
(ICCSB1, Max)
(ICC, Max)
Vcc=2.0V
Vcc=2.0V
30uA
25mA
40uA
30mA
PKG TYPE
BGA-48-0810
BGA-48-0912
BGA-48-0810
BGA-48-0912
PIN CONFIGURATIONS
BLOCK DIAGRAM
123456
A LB OE A0 A1 A2 CE2
B D8 UB A3 A4 CE1 D0
C D9 D10 A5 A6 D1 D2
D VSS D11 A17 A7 D3 VCC
E VCC D12 A19 A16 D4 VSS
F D14 D13 A14 A15 D5 D6
G D15 CI.O A12 A13 WE D7
H A18 A8 A9 A10 A11 SAE.
48-Ball CSP top View
A19
A15
A14
A13
A12
A11
A10
A9
A8
A17
A7
A6
D0
.
.
.
.
D15
Address
Input
Buffer
24
Row
4096
Decoder
16(8)
.
.
. 16(8)
.
Data
Input
Buffer
16(8)
16(8)
Data
Output
Buffer
Memory Array
4096 x 4096
4096
Column I/O
Write Driver
Sense Amp
256(512)
Column Decoder
CE1
CE2
WE
OE
UB
LB
CIO
Vdd
Vss
Control
16(18)
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5 A18 (SAE)
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616UV1620
1
Revision 2.2
April 2001
BSI
BS616UV1620
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER
NAME
V IL
V IH
I IL
PARAMETER
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(2)
Input Leakage Current
TEST CONDITIONS
Vcc= 2.0V
Vcc= 2.0V
Vcc = Max, VIN = 0V to Vcc
I OL
Output Leakage Current
Vcc = Max, CE1 = VIH, or CE2 = ViL, or
OE = VIH, VI/O = 0V to Vcc
V OL
Output Low Voltage
Vcc= max, IOL = 1mA
Vcc= 2.0V
V OH
I CC
Output High Voltage
Vcc= Min, IOH= -0.5mA
Operating Power Supply
Current
Vcc= max, CE1 = VILand CE2 =
VIH,
IDQ = 0mA, F = Fmax(3)
Vcc= 2.0V
Vcc= 2.0V
I CCSB
Standby Current-TTL
Vcc= max, CE1 = VIH or CE2 =
VIL, IDQ = 0mA
Vcc= 2.0V
I CCSB1
Standby Current-CMOS
Vcc= max,CE1 Њ Vcc-0.2V, or
CE2 Љ 0.2V, or LB and UB Њ
Vcc - 0.2V,
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
Vcc= 2.0V
MIN. TYP. (1) MAX.
-0.5 --
0.4
1.4 -- Vcc+0.2
-- --
1
UNITS
V
V
uA
-- --
-- --
1.6 --
1
0.4
--
uA
V
V
-- -- 25 mA
-- -- 0.8 mA
-- 1.2
30
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/ tRC .
R0201-BS616UV1620
4
Revision 2.2
April 2001
4페이지 BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
ADDRESS
D OUT
READ CYCLE2 (1,3,4)
t OH t AA
CE2
CE1
D OUT
t ACS2
t ACS1
t (5)
CLZ
t RC
BS616UV1620
t OH
t CH(Z5)
READ CYCLE3 (1,4)
ADDRESS
OE
CE2
CE1
LB,UB
t RC
t AA
t OE
t ACS2
t OLZ
t ACS1
t (5)
CLZ
t BE
t BA
t OH
t (5)
OHZ
t (1,5)
CHZ
t BDO
D OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2 = VIH.
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.
4. OE = VIL .
5. Transition is measured ± 500mV from steady state with CL = 30pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
R0201-BS616UV1620
7
Revision 2.2
April 2001
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ BS616UV1620BI.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BS616UV1620BC | Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable | Brilliance Semiconductor |
BS616UV1620BI | Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable | Brilliance Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |