|
|
PDF BS616UV2011DI Data sheet ( Hoja de datos )
| Número de pieza | BS616UV2011DI | |
| Descripción | Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit | |
| Fabricantes | Brilliance Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BS616UV2011DI (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
BSI Ultra Low Power/Voltage CMOS SRAM
128K X 16 bit
BS616UV2011
FEATURES
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
Vcc = 2.0 V C-grade: 15mA (Max.) operating current
I-grade: 20mA (Max.) operating current
0.08uA (Typ.) CMOS standby current
Vcc = 3.0 V C-grade: 20mA (Max.) operating current
I -grade: 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc = 2.0V
-10 100ns (Max.) at Vcc = 2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
PRODUCT FAMILY
DESCRIPTION
The BS616UV2011 is a high performance, Ultra low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.08uA and maximum access time of 70/100ns in 2.0V operation.
Easy memory expansion is provided by an active LOW chip
enable(CE), active LOW output enable(OE) and three-state output
drivers.
The BS616UV2011 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV2011 is available in DICE form, JEDEC standard 44-pin
TSOP Type II package , JEDEC standard 48-pin TSOP Type I package
and 48-ball BGA package.
PRODUCT
FAMILY
BS616UV2011DC
BS616UV2011EC
BS616UV2011TC
BS616UV2011AC
BS616UV2011DI
BS616UV2011EI
BS616UV2011TI
BS616UV2011AI
OPERATING
TEMPERATURE
Vcc
RANGE
+0O C to +70OC 1.8V ~ 3.6V
-40O C to +85OC 1.8V ~ 3.6V
SPEED
( ns )
Vcc=
2.0V
70/100
70/100
POWER DISSIPATION
STANDBY
( I CCSB1, Max )
Operating
( I CC , Max )
Vcc=
2.0V
Vcc=
3.0V
Vcc=
2.0V
Vcc=
3.0V
0.5uA
0.7uA 15mA
20mA
1uA 1.5uA 20mA 25mA
PKG TYPE
DICE
TSOP2-44
TSOP1-48
BGA-48-0608
DICE
TSOP2-44
TSOP1-48
BGA-48-0608
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
BS616UV2011EC
BS616UV2011EI
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
123456
A LB OE A0 A1 A2 N.C.
B D8 UB A3 A4 CE D0
BLOCK DIAGRAM
A8
A13
A15
A16
A14
A12
A7
A6
A5
A4
DQ0
.
.
.
.
DQ15
Address
Input
Buffer
20
Row
1024
Decoder
Data
16
Input
16
. Buffer
.
. 16
.
Data
Output
16
Buffer
Memory Array
1024 x 2048
2048
Column I/O
Write Driver
Sense Amp
128
Column Decoder
C D9 D10 A5 A6 D1 D2
D
VSS D11 N.C. A7
D3 VCC
E VCC D12 N.C. A16 D4 VSS
CE
WE
OE Control
UB
LB
14
Address Input Buffer
A11 A9 A3 A2 A1 A0 A10
F
D14 D13 A14 A15
D5
D6
G
D15 N.C. A12 A13 WE
D7
Vcc
Gnd
H
N.C. A8
A9 A10 A11 N.C.
Brillian4c8-ebalSl BeGmA toipcvoiewnductor Inc. reserves the right to modify document contents without notice.
R0201-BS616UV2011
1
Revision 2.5
April 2002
1 page  
BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
ADDRESS
D OUT
READ CYCLE2 (1,3,4)
t OH
t AA
t RC
BS616UV2011
t OH
CE
LB,UB
D OUT
t ACS
t BA
t (5)
CLZ
t BE
t tBDO
(5)
CHZ
READ CYCLE3 (1,4)
ADDRESS
t RC
t AA
OE
t OE
CE
LB,UB
t OLZ
t(5) ACS
t CLZ
t BA
t BE
D OUT
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL .
5. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
t OH
t OHZ (5)
t (1,5)
CHZ
t BDO
R0201-BS616UV2011
5
Revision 2.5
April 2002
5 Page 
BSI
BS616UV2011
REVISION HISTORY
Revision
2.2
2.3
2.4
2.5
Description
2001 Data Sheet release
Date
Note
Apr. 15, 2001
Modify Standby Current (Typ. Jun. 29, 2001
and Max.)
Modify CSP Pin Configuration Sep. 12, 2001
Pin number : E3
“ VSS ” rename to “ N.C. “
Modify some AC parameters April,12,2002
R0201-BS616UV2011
11
Revision 2.5
April 2002
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BS616UV2011DI.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BS616UV2011DC | Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit | Brilliance Semiconductor |
| BS616UV2011DI | Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit | Brilliance Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |