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부품번호 | BFR30LT1 기능 |
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기능 | JFET Amplifiers(N-Channel) | ||
제조업체 | Motorola Inc | ||
로고 | |||
전체 6 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET Amplifiers
N – Channel
3
GATE
2 SOURCE
1 DRAIN
Order this document
by BFR30LT1/D
BFR30LT1
BFR31LT1
3
1
2
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Source Voltage
Gate – Source Voltage
THERMAL CHARACTERISTICS
VDS
VGS
25
25
Characteristic
Total Device Dissipation(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556
300
2.4
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
BFR30LT1 = M1; BFR31LT1 = M2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Gate Reverse Current
Gate Source Cutoff Voltage
(VGS = 10 Vdc, VDS = 0)
(ID = 0.5 nAdc, VDS = 10 Vdc)
BFR30
BFR31
IGSS
VGS(OFF)
—
—
—
Gate Source Voltage
(ID = 1.0 mAdc, VDS = 10 Vdc)
(ID = 50 mAdc, VDS = 10 Vdc)
BFR30
BFR31
BFR30
BFR31
VGS
– 0.7
—
—
—
1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Unit
Vdc
Vdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max Unit
0.2
5.0
2.5
– 3.0
– 1.3
– 4.0
– 2.0
nAdc
Vdc
Vdc
Thermal Clad is a registered trademark of the Berquist Company.
©MMotootorroollaa, SInmc. 1a9ll9–6Signal Transistors, FETs and Diodes Device Data
1
BFR30LT1 BFR31LT1
TYPICAL CHARACTERISTICS
5
4
^VGS(off) – 3.5 V
3
VGS = 0 V
–1 V
2
–2 V
1
–3 V
0
0 5 10 15 20 25
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
Figure 5. Typical Drain Characteristics
10
VGS = 0 V
^8 VGS(off) – 5.8 V
–1 V
6
–2 V
4
–3 V
2
–4 V
–5 V
0
0 5 10 15 20
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
Figure 7. Typical Drain Characteristics
25
5
^VGS(off) – 3.5 V
4
3
VDS = 15 V
2
1
0
–5 –4 –3 –2 –1
VGS, GATE – SOURCE VOLTAGE (VOLTS)
Figure 6. Common Source Transfer
Characteristics
^10
VGS(off) – 5.8 V
8
6
VDS = 15 V
4
2
0
–7 –6 –5 –4 –3 –2 –1
VGS, GATEā–āSOURCE VOLTAGE (VOLTS)
Figure 8. Common Source Transfer
Characteristics
0
0
Note: Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630
ms, Duty Cycle = 10%). Under dc conditions, self heat-
ing in higher IDSS units reduces IDSS.
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BFR30LT1 | JFET Amplifiers(N-Channel) | Motorola Inc |
BFR30LT1 | JFET Amplifiers | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |