(PDF) BFR35AP Datasheet - NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)

Número de pieza	BFR35AP
Descripción	NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)
Fabricantes	Siemens Semiconductor Group
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No Preview Available ! NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA BFR 35AP ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 35AP GEs Q62702-F938 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS ≤ 48 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg RthJS 1) TS is measured on the collector lead at the soldering point to the pcb. Values 15 20 20 2.5 30 4 280 150 - 65 ... + 150 - 65 ... + 150 ≤ 365 Unit V mA mW °C K/W Semiconductor Group 1 Dec-12-1996 1 page

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PDF BFR35AP Data sheet ( Hoja de datos )