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PDF BGA619 Data sheet ( Hoja de datos )
| Número de pieza | BGA619 | |
| Descripción | The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Application Note No. 081
Discrete Semiconductors
The BGA619 Silicon-Germanium High IP3 Low Noise
Amplifier in PCS Receiver Applications
Features
• Easy-to-use LNA MMIC in 70 GHz ft SiGe technology
• Tiny „Green“ P-TSLP-7-1 package (no Lead or Halogen
compounds)
• Low external component count
6
• Integrated output DC blocking capacitor, integrated RF
choke on internal bias network
• Three gain steps
• Power off function
1 23
• High IP3 in all modes
P-TSLP-7-1
5
4
7
Applications
• Low Noise Amplifier for 1900 MHz PCS wireless frontends (CDMA 2000).
Introduction
The BGA619 is an easy-to-use, low-cost Low Noise Amplifier (LNA) MMIC designed
for use in today’s PCS systems which require excellent linearity in each of several gain
step modes. Based on Infineon’s cost-effective 70 GHz fT Silicon-Germanium (SiGe)
B7HF bipolar process technology, the BGA619 offers a 1.5 dB noise figure and 14.9 dB
of gain at 1.96 GHz with a current consumption of 6.5 mA in high gain mode. BGA619
offers impressive IIP3 performance of 7 dBm in High Gain mode, particularly for a three-
gain step, low-cost, integrated MMIC.
The new LNA incorporates a 50 Ω pre-matched output with an integrated output DC
blocking capacitor. The input is pre-matched, requiring an external DC blocking
capacitor. An integrated, on-chip inductor eliminates the need for an external RF choke
on the voltage supply pin. The operating mode of the device is determined by the voltage
at the GS-pin. An integrated on/off feature provides for low power consumption and
increased stand by time for PCS cellular handsets.
AN081
1 2004-04-19
1 page  
Application Note No. 081
Discrete Semiconductors
Table 3
Bill of materilal
Name Value
R1 15 kΩ
Package
0402
L1 3.3 nH 0402
L2 4.7 nH 0402
C1 10 nF 0402
C2 10 pF 0402
C3 10 pF 0402
C4 10p
0402
C5 1 nF
0402
C6 1 nF
C7
0402
0402
N1 BGA619 P-TSLP-7-1
Manufacturer
various
various
various
various
various
various
various
various
various
various
Infineon
Function
bias resistance; set device
current
LF trap & input matching; L1
and C1 provide low-frequency
trap to increase input IP3
output matching
LF trap for IP3 enhancement
output DC block; optional
because DC block is integrated
input DC block
control voltage filtering -
OPTIONAL, depends on actual
user implementation
control voltage filtering -
OPTIONAL, depends on actual
user implementation
supply filtering, depends on
actual user implementation
supply filtering -
OPTIONAL, depends on actual
user implementation
SiGe LNA with gain-steps
The application board is made of 3 layer FR4 material (see Figure 4). The top view can
be seen in Figure 5 and the bottom view in Figure 6. Pictures of the board can be found
in Figure 7 (complete board) and Figure 8 (close-in photograph, where BGA619 and
surrounding elements can be found in detail).
AN081
5 2004-04-19
5 Page 
Application Note No. 081
Discrete Semiconductors
Figure 12 Return Loss High Gain Mode
Matching |S |, |S | = f(f)
11 22
V = 2.78V, I = 6.5mA
CC CC
−4
−6
−8
−10
−12
−14
−16
−18
−20
1.8
1.85
S
11
S
22
1.9 1.95
Frequency [GHz]
2
2.05
2.1
Figure 13 Reverse Isolation High Gain Mode
Reverse Isolation |S | = f(f)
12
V = 2.78V, I = 6.5mA
CC CC
−20
−21
−22
−23
−24
−25
−26
−27
−28
−29
−30
1.8
1.85
1.9 1.95
Frequency [GHz]
2
2.05
2.1
AN081
11 2004-04-19
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet BGA619.PDF ] | |
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