PDF BGD702N Data sheet ( Hoja de datos )

Número de pieza	BGD702N
Descripción	750 MHz/ 18.5 dB gain power doubler amplifier
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702N 750 MHz, 18.5 dB gain power doubler amplifier Product speciﬁcation Supersedes data of 2001 Oct 25 2001 Nov 02 1 page Philips Semiconductors 750 MHz, 18.5 dB gain power doubler ampliﬁer Product speciﬁcation BGD702N Table 3 Bandwidth 40 to 550 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL PARAMETER Gp power gain SL slope cable equivalent FL ﬂatness of frequency response S11 input return losses S22 output return losses S21 CTB Xmod CSO d2 Vo F Itot phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise ﬁgure total current consumption (DC) CONDITIONS f = 50 MHz f = 550 MHz f = 40 to 550 MHz f = 40 to 550 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz f = 50 MHz 77 channels ﬂat; Vo = 44 dBmV; measured at 547.25 MHz 77 channels ﬂat; Vo = 44 dBmV; measured at 55.25 MHz 77 channels ﬂat; Vo = 44 dBmV; measured at 548.5 MHz note 1 dim = −60 dB; note 2 see Table 1 note 3 MIN. 18 18.5 0.2 − 20 19 18 17 20 19 18 17 −45 − MAX. 19 − 2 ±0.2 − − − − − − − − +45 −67 − −67 − −62 − −72 64.5 − −− − 435 Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz. 2. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. UNIT dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB mA 2001 Nov 02 5 5 Page

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