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PDF BLF368 Data sheet ( Hoja de datos )

Número de pieza BLF368
Descripción VHF push-pull power MOS transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! BLF368 Hoja de datos, Descripción, Manual

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D091
BLF368
VHF push-pull power MOS
transistor
Product specification
Supersedes data of September 1992
1998 Jul 29

1 page




BLF368 pdf
Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF368
handboo2k,0h0alfpage
RDSon
(m)
150
MGP231
100
50
0
50
VGS = 10 V; ID = 8 A.
100 150
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
handbo1o5k,0h0alfpage
C
(pF)
1000
MGP234
500 Cis
Cos
0
0 10 20 30 40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values per
section.
handbook6,0h0alfpage
Crs
(pF)
400
MGP232
200
0
0 10 20 30 40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values per
section.
1998 Jul 29
5

5 Page





BLF368 arduino
Philips Semiconductors
VHF push-pull power MOS transistor
handbook, full pagewidth
119
100
Product specification
BLF368
130
+VDD1
L1
hollow rivets
L3
R9
L2
IC1
to R1, R6
C31
C32
C34 C33
slider R1
C9
R2
C8 C6
C1
L4
C3
C2
L5
C11
R3 L8
L6
C4
C5 L7
R4 L9
R5
C10
slider R6
C7
copper strap
C13
C18
C12
L12
R7
L12
C16
C17
L10
C22
L11
L13 +VDD1
hollow rivet
C25
L16
L18
C23
C24
L17
C26
C27
L19
C29
L20
C28
L21
C30
L22
hollow rivets
+VDD2
L14
L15 L23
R8
C19 L15
C20
C14
C15 C21
copper strap
L24
MGP213
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane.
Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Dimensions in mm.
Fig.13 Component layout for 225 MHz class-AB test circuit.
1998 Jul 29
11

11 Page







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