(PDF) BLT50 Datasheet - UHF power transistor

Número de pieza	BLT50
Descripción	UHF power transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product speciﬁcation April 1991 1 page Philips Semiconductors UHF power transistor Product speciﬁcation BLT50 APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) c.w. narrow band 470 7.5 1.2 Gp (dB) > 10 typ. 11.2 ηc (%) > 55 typ. 65 handbook,1h6alfpage Gp (dB) 12 8 4 0 0.6 1.0 MEA219 100 η Gp (%) 80 η 60 40 1.4 1.8 2.2 PL (W) VCE = 7.5 V; f = 470 MHz. Fig.4 Gain and efficiency as functions of load power, typical values. handbook, h2alfpage PL (W) 1 MEA220 0 0 100 200 PD (mW) VCE = 7.5 V; f = 470 MHz. Fig.5 Load power as a function of drive power, typical values. Ruggedness in class-B operation The BLT50 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 9 V, f = 470 MHz and Ts ≤ 60 °C, where Ts is the temperature at the soldering point of the collector tab. April 1991 5 5 Page

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PDF BLT50 Data sheet ( Hoja de datos )