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부품번호 | BLT70 기능 |
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기능 | UHF power transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 11 페이지수
DISCRETE SEMICONDUCTORS
DATA SHEET
BLT70
UHF power transistor
Product specification
1996 Feb 06
Philips Semiconductors
UHF power transistor
Product specification
BLT70
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
hFE
Cc
Cre
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
open emitter; IC = 0.5 mA
open base; IC = 5 mA
open collector; IE = 0.2 mA
VCE = 7 V; VBE = 0
VCE = 4.8 V; IC = 100 mA
VCB = 4.8 V; IE = ie = 0; f = 1 MHz
VCE = 4.8 V; IC = 0; f = 1 MHz
MIN.
16
8
2.5
−
25
−
−
MAX.
−
−
−
0.1
−
3.5
2.5
UNIT
V
V
V
mA
pF
pF
100
handbook, halfpage
hFE
80
60
40
20
0
0
100
MGD198
200 300
IC (mA)
VCE = 4.8 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
4
handbook, halfpage
Cc
(pF)
3
MGD199
2
1
0
0 4 8 12 16
VCB (V)
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
1996 Feb 06
4
4페이지 Philips Semiconductors
UHF power transistor
Product specification
BLT70
List of components used in test circuit (see Figs 7 and 8)
COMPONENT
C1, C6, C9, C14
C2
C4
C3, C5, C12, C13
C7
C8
C10
C11
L1
DESCRIPTION
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
film dielectric trimmer
multilayer ceramic chip capacitor;
note 1
tantalum capacitor
multilayer ceramic chip capacitor;
note 1
tantalum capacitor
stripline; note 2
VALUE
100 pF
1 pF
2.4 pF
1.4 to 5.5 pF
5.1 pF
1 µF, 35 V
2.7 pF
100 µF, 20 V
50 Ω
L2 stripline; note 2
50 Ω
L3 8 turns enamelled 0.8 mm copper 216 nH
wire
L4 stripline; note 2
50 Ω
L5 stripline; note 2
50 Ω
L6 stripline; note 2
50 Ω
L7 8 turns enamelled 0.8 mm copper 105 nH
wire
L8 grade 3B Ferroxcube wideband
HF choke
L9 stripline; note 2
50 Ω
L10 stripline; note 2
50 Ω
R1 metal film resistor
R2 metal film resistor
R3 metal film resistor
T1 NPN transistor
0.1 W, 15 Ω
0.1 W, 390 Ω
0.6 W, 10 Ω
BD139
DIMENSIONS CATALOGUE No.
2222 809 09004
length 29.1 mm
width 5 mm
length 21 mm
width 5 mm
length 7 mm
internal dia. 4.5 mm
length 1 mm
width 5 mm
length 3 mm
width 2.5 mm
length 12 mm
width 5 mm
length 7 mm
internal dia. 3.4 mm
4132 020 36640
length 12 mm
width 5 mm
length 28 mm
width 5 mm
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr = 2.2); thickness 1⁄16";
thickness of the copper sheet 2 × 35 µm.
1996 Feb 06
7
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BLT70 | UHF power transistor | NXP Semiconductors |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |