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PDF BLT80 Data sheet ( Hoja de datos )
| Número de pieza | BLT80 | |
| Descripción | UHF power transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLT80
UHF power transistor
Product specification
Supersedes data of May 1992
1996 May 09
1 page  
Philips Semiconductors
UHF power transistor
Product specification
BLT80
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7).
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
CW, class-B narrow band
900 7.5 0.8
Note
1. Ts is the temperature at the soldering point of the collector pin.
Gp
(dB)
≥6
typ. 8
ηC
(%)
≥60
typ. 67
Ruggedness in class-AB operation
The BLT80 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 9 V; PL = 0.8 W; Ts ≤ 60 °C.
handbook, 1h0alfpage
Gp
Gp
(dB)
8
MRA774
100
ηC
(%)
80
6
ηC
4
60
40
2 20
00
0 0.3 0.6 0.9 1.2 1.5
PL (W)
Class-B; f = 900 MHz; VCE = 7.5 V; Ts ≤ 60 °C.
Fig.5 Power gain and collector efficiency as
functions of load power; typical values.
handbook,1h.5alfpage
PL
(W)
1.2
0.9
0.6
0.3
0
0
200
MRA779
400 600
PD (mW)
Class-B; f = 900 MHz; VCE = 7.5 V; Ts ≤ 60 °C.
Fig.6 Load power as a function of drive
power; typical values.
1996 May 09
5
5 Page 
Philips Semiconductors
UHF power transistor
NOTES
Product specification
BLT80
1996 May 09
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BLT80.PDF ] | |
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