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부품번호 | BLV100 기능 |
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기능 | UHF power transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 10 페이지수
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV100
UHF power transistor
Product specification
March 1993
Philips Semiconductors
UHF power transistor
Product specification
BLV100
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
V(BR)CES
collector-emitter breakdown voltage
V(BR)CEO
collector-emitter breakdown voltage
V(BR)EBO
emitter-base breakdown voltage
ICES collector-emitter leakage current
hFE DC current gain
Cc collector capacitance
Cre feedback capacitance
Cc-f collector-flange capacitance
CONDITIONS
VBE = 0;
IC = 8 mA
open base;
IC = 60 mA
open collector;
IE = 4 mA
VBE = 0;
VCE = 30 V
VCE = 25 V;
IC = 0.6 A
VCB = 25 V;
IE = Ie = 0;
f = 1 MHz
VCE = 25 V;
IC = 40 mA;
f =1 MHz
MIN. TYP. MAX. UNIT
50 −
−
V
30 −
−
V
4 −− V
− − 2 mA
20 75 −
‘
− 13.5 − pF
− 8.4 − pF
− 2 − pF
handboo1k,0h0alfpage
hFE
80
MDA544
60
40
20
0
0 0.4
VCE = 25 V.
0.8 1.2
1.6 2
IC (A)
Fig.4 DC current gain as a function of collector
current, typical values.
60
handbook, halfpage
Cc
(pF)
40
MDA542
20
0
0 10 20 30
VCB (V)
Fig.5 Output capacitance as a function of
collector-base voltage, typical values.
March 1993
4
4페이지 Philips Semiconductors
UHF power transistor
Product specification
BLV100
Notes
1. American Technical Ceramics capacitor type 100A, or capacitor of the same quality.
2. American Technical Ceramics capacitor type 100B, or capacitor of the same quality.
3. The microstrips are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1⁄32 inch.
handbook, full pagewidth
122 mm
copper straps
copper straps
rivets
rivets
copper straps
rivets
M2 rivets
copper straps
M3
70 mm
C7
C1
L1
L2
C3
L6
L8
R1 C6
C8 C10
R2
L5
C5
L3
L4
L7
C12
L10
L9
C4
C3
C11
C13
C9
C15
L11 L12
C14
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as an earth. Earth connections are made by means of fixing screws, hollow rivets and
straps around the board and under the emitters, to provide a direct contact between the component ground
plane.
Fig.9 Component layout for 960 MHz test circuit.
March 1993
7
MDA536
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |