|
|
|
부품번호 | BLV103 기능 |
|
|
기능 | UHF power transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 10 페이지수
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV103
UHF power transistor
Product specification
March 1993
Philips Semiconductors
UHF power transistor
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
V(BR)CBO
collector-base breakdown voltage
V(BR)CEO
collector-emitter breakdown voltage
V(BR)EBO
emitter-base breakdown voltage
ICES collector-emitter leakage current
hFE DC current gain
Cc collector capacitance
Cre feedback capacitance
CONDITIONS
open emitter;
IC = 4 mA
open base;
IC = 30 mA
open collector;
IE = 2 mA
VBE = 0;
VCE = 30 V
VCE = 25 V;
IC = 300 mA
VCB = 25 V;
IE = Ie = 0;
f = 1 MHz
VCE = 25 V;
IC = 20 mA;
f = 1 MHz
Product specification
BLV103
MIN. TYP. MAX. UNIT
50 −
−
V
30 −
−
V
4−−
V
−−1
mA
20 40 −
− 6.6 8
pF
− 3.5 4.5 pF
handbook, 5ha0lfpage
hFE
40
VCE = 25 V
30 5 V
MRA361
20
10
0
0 0.2 0.4 0.6 0.8 1
IC (A)
Fig.4 DC current gain as a function of collector
current, typical values.
20
handbook, halfpage
Cc
(pF)
10
MRA358
0
0 10 20 VCB (V) 30
IE = ie = 0; f = 1 MHz.
Fig.5 Collector capacitance as a function of
collector-base voltage, typical values.
March 1993
4
4페이지 Philips Semiconductors
UHF power transistor
Product specification
BLV103
Notes
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2);
thickness 1⁄32 inch.
handbook, full pagewidth
122 mm
copper straps
copper straps
rivets
rivets
copper straps
rivets
M2 rivets
copper straps
M3
70 mm
C7
C1
L1
L2
C3
L6
L8
R1 C6
C8 C10
R2
L5
C5
L3
L4
L7
C12
L10
L9
C4
C3
C11
C13
C9
C15
L11 L12
C14
MDA536
The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is fully metallized
and serves as a ground plane. Connections are made by means of fixing screws, hollow rivets and copper straps around the
board and under the emitters, to provide a direct contact between the components side and the ground plane.
Fig.9 Component layout for 960 MHz class-AB test circuit.
March 1993
7
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ BLV103.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BLV10 | VHF power transistor | NXP Semiconductors |
BLV10 | VHF power transistor | New Jersey Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |