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Datasheet BLW50F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BLW50F | HF/VHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLW50F HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial a |  NXP Semiconductors | transistor |
| 2 | BLW50F | Trans GP BJT NPN 55V 2.5A 4-Pin SOT-123A |  New Jersey Semiconductor | data |
BLW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BLW24 | Silicon NPN VHF Power Transistor Texas transistor | | |
| 2 | BLW29 | VHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLW29 VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nomin NXP Semiconductors transistor | | |
| 3 | BLW30 | VHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLW30 VHF power transistor
Product specification September 1991
Philips Semiconductors
Product specification
VHF power transistor
FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Excellent reliability • Withstands full load NXP Semiconductors transistor | | |
| 4 | BLW31 | NPN SILICON RF POWER TRANSISTOR BLW31
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability
PACKAGE STYLE .380 4L STUD
.112x45° A
B
C E
ØC
FEATURES:
• Common Emitter-Class-C �  Advanced Semiconductor transistor | | |
| 5 | BLW32 | UHF linear power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLW32 UHF linear power transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF linear power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for tele NXP Semiconductors transistor | | |
| 6 | BLW32 | Trans GP BJT NPN 30V 0.65A 4-Pin CRPM New Jersey Semiconductor data | | |
| 7 | BLW33 | UHF linear power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLW33 UHF linear power transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF linear power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for tele NXP Semiconductors transistor | |
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