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PDF BLY90 Data sheet ( Hoja de datos )
| Número de pieza | BLY90 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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BLY90
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY90 is Designed for
Class A,B and C, 12.5 V High Band
Applications up to 175 MHz.
FEATURES:
• Common Emitter
• PG = 5.0 dB at 50 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 8.0 A
VCBO
36 V
VCEO
18 V
VEBO
4.0 V
PDISS
130 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 1.35 °C/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
C
B
EE
ØC
B
D
#8-32 UNC-2A
DIM
A
B
C
D
E
F
G
H
I
J
M IN IM U M
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
E
HI
J
G
F
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 100 mA
BVCEO
IC = 100 mA
BVEBO
IE = 25 mA
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
36
18
4.0
10 200
UNITS
V
V
---
Cc VCB = 15 V
fT VCE = 10 V
IC = 6.0 A
f = 1.0 MHz
130 160 pF
550 MHz
GP
ηC
VCC = 12.5 V
POUT = 50 W
f = 175 MHz
5.0
75
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
1 page | ||
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| PDF Descargar | [ Datasheet BLY90.PDF ] | |
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