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부품번호 | BP103 기능 |
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기능 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | ||
제조업체 | Siemens Semiconductor Group | ||
로고 | |||
전체 6 페이지수
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
BP 103
BP 103
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
Features
q Speziell geeignet für Anwendungen im
Bereich von 420 nm bis 1130 nm
q Hohe Linearität
q TO-18, Bodenplatte, klares Epoxy-
Gieβharz, mit Basisanschluβ
q Especially suitable for applications from
420 nm to 1130 nm
q High linearity
q TO-18, base plate, transparent epoxy resin
lens, with base connection
Anwendungen
q Computer-Blitzlichtgeräte
q Lichtschranken für Gleich- und
Wechsellichtbetrieb
q Industrieelektronik
q “Messen/Steuern/Regeln”
Applications
q Computer-controlled flashes
q Photointerrupters
q Industrial electronics
q For control and drive circuits
Typ
Type
Bestellnummer
Ordering Code
BP 103
Q62702-P75
BP 103-2
Q62702-P79-S1
BP 103-3
Q62702-P79-S2
BP 103-4
BP 103-51)
Q62702-P79-S4
Q 62702-P781
1) Lieferung in dieser Gruppe kann wegen Ausbeuteschwankungen nicht immer sichergestellt werden.
Wir behalten uns in diesem Fall die Lieferung einer Ersatzgruppe vor.
1) Supplies out of this group cannot always be guaranteed due to unforseeable spread of yield.
In this case we will reserve us the right of delivering a substitute group.
Semiconductor Group
211
10.95
BP 103
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen
Ziffern gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished
by arabian figures.
Bezeichnung
Description
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
Ev = 1000 Ix.
Normlicht/standard light A
VCE = 5 V
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation
voltage
IC
=
I 1)
PCEmin
×
0.3
Ee = 0.5 mW/cm2
Stromverstärkung
Current gain
Ee = 0.5 mW/cm2, VCE = 5 V
Symbol
Symbol
-2
Wert
Value
-3 -4
Einheit
Unit
-5
IPCE 80 ... 160 125 ... 250 200 ... 400 ≥ 320 µA
IPCE 0.38 0.6
tr, tf 5
7
0.95 1.4 mA
9 12 µs
VCEsat
150
150
150
150 mV
IPCE 140
210
340
530
IPCB
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe
1) IPCEmin is the min. photocurrent of the specified group
Semiconductor Group
214
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ BP103.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BP10-005 | Diode ( Rectifier ) | American Microsemiconductor |
BP10-01 | Diode ( Rectifier ) | American Microsemiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |