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BP103-4 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BP103-4
기능 NPN-Silizium-Fototransistor Silicon NPN Phototransistor
제조업체 Siemens Semiconductor Group
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BP103-4 데이터시트, 핀배열, 회로
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
BP 103
BP 103
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
Features
q Speziell geeignet für Anwendungen im
Bereich von 420 nm bis 1130 nm
q Hohe Linearität
q TO-18, Bodenplatte, klares Epoxy-
Gieβharz, mit Basisanschluβ
q Especially suitable for applications from
420 nm to 1130 nm
q High linearity
q TO-18, base plate, transparent epoxy resin
lens, with base connection
Anwendungen
q Computer-Blitzlichtgeräte
q Lichtschranken für Gleich- und
Wechsellichtbetrieb
q Industrieelektronik
q “Messen/Steuern/Regeln”
Applications
q Computer-controlled flashes
q Photointerrupters
q Industrial electronics
q For control and drive circuits
Typ
Type
Bestellnummer
Ordering Code
BP 103
Q62702-P75
BP 103-2
Q62702-P79-S1
BP 103-3
Q62702-P79-S2
BP 103-4
BP 103-51)
Q62702-P79-S4
Q 62702-P781
1) Lieferung in dieser Gruppe kann wegen Ausbeuteschwankungen nicht immer sichergestellt werden.
Wir behalten uns in diesem Fall die Lieferung einer Ersatzgruppe vor.
1) Supplies out of this group cannot always be guaranteed due to unforseeable spread of yield.
In this case we will reserve us the right of delivering a substitute group.
Semiconductor Group
211
10.95




BP103-4 pdf, 반도체, 판매, 대치품
BP 103
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen
Ziffern gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished
by arabian figures.
Bezeichnung
Description
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
Ev = 1000 Ix.
Normlicht/standard light A
VCE = 5 V
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 k
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation
voltage
IC
=
I 1)
PCEmin
×
0.3
Ee = 0.5 mW/cm2
Stromverstärkung
Current gain
Ee = 0.5 mW/cm2, VCE = 5 V
Symbol
Symbol
-2
Wert
Value
-3 -4
Einheit
Unit
-5
IPCE 80 ... 160 125 ... 250 200 ... 400 320 µA
IPCE 0.38 0.6
tr, tf 5
7
0.95 1.4 mA
9 12 µs
VCEsat
150
150
150
150 mV
IPCE 140
210
340
530
IPCB
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe
1) IPCEmin is the min. photocurrent of the specified group
Semiconductor Group
214

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