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BP103BF PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BP103BF
기능 .NPN-Silizium-Fototransistor Silicon NPN Phototransistor
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BP103BF 데이터시트, 핀배열, 회로
.NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
SFH 300
SFH 300 FA
SFH 300
SFH 300 FA
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Speziell geeignet für Anwendungen im
Bereich von 420 nm bis 1130 nm (SFH 300)
und bei 880 nm (SFH 300 FA)
q Hohe Linearität
q 5 mm-Plastikbauform im LED-Gehäuse
q Gruppiert lieferbar
Anwendungen
q Computer-Blitzlichtgeräte
q Lichtschranken für Gleich- und
Wechsellichtbetrieb
q Industrieelektronik
q “Messen/Steuern/Regeln”
Features
q Especially suitable for applications from
420 nm to 1130 nm (SFH 300) and of
880 nm (SFH 300 FA)
q High linearity
q 5 mm LED plastic package
q Available in groups
Applications
q Computer-controlled flashes
q Photointerrupters
q Industrial electronics
q For control and drive circuits
Semiconductor Group
240
10.95




BP103BF pdf, 반도체, 판매, 대치품
SFH 300
SFH 300 FA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen
Ziffern gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished
by arabian figures.
Bezeichnung
Description
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
SFH 300:
Ev = 1000 Ix, Normlicht/standard light A,
VCE = 5 V
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 k
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC
=
I 1)
PCEmin
×
0.3,
Ee = 0.5 mW/cm2
Symbol
Symbol
-2
Wert
Value
Einheit
Unit
-3 -4
IPCE 0.63 ... 1.25 1 ... 2 1.6 mA
IPCE 3.4
5.4 8.6 mA
tr, tf 7.5
10 10 µs
VCEsat
130
140 150 mV
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe
1) IPCEmin is the min. photocurrent of the specified group
Semiconductor Group
243

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