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PDF BPW34F Data sheet ( Hoja de datos )
| Número de pieza | BPW34F | |
| Descripción | Silizium-PIN-Fotodiode mit Tageslichtsperrfilter | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BPW34F (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Silizium-PIN-Fotodiode mit Tageslichtsperrfilter
NEU: in SMT und als Reverse Gullwing
Silicon PIN Photodiode with Daylight Filter
NEW: in SMT and as Reverse Gullwing
BPW 34 F
BPW 34 FS
BPW 34 FS (E9087)
Cathode marking
4.0
3.7
5.4
4.9 Chip position
4.5
4.3
0.6
0.4
0.5
0.3
0.8
0.6
0.6
0.35 0.4
0.2
0 ... 5˚
5.08 mm
spacing
Photosensitive area
2.65 mm x 2.65 mm
BPW 34 F
Approx. weight 0.1 g
GEO06643
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Speziell geeignet für Anwendungen
bei 950 nm
q kurze Schaltzeit (typ. 20 ns)
q DIL-Plastikbauform mit hoher
Packungsdichte
q BPW 34 FS/(E9087); geeignet für
Vapor-Phase Löten und IR-Reflow Löten
Anwendungen
q IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Gerätefernsteuerungen
q Lichtschranken für Gleich- und
Wechsellichtbetrieb
Features
q Especially suitable for applications
of 950 nm
q Short switching time (typ. 20 ns)
q DIL plastic package with high packing density
q BPW 34 FS/(E9087); suitable for vapor-
phase and IR-reflow soldering
Applications
q IR remote control of hi-fi and TV sets,
video tape recorders, remote controls of
various equipment
q Photointerrupters
Semiconductor Group
1
1998-08-27
1 page  
BPW 34 F, BPW 34 FS
BPW 34 FS (E9087)
Relative spectral sensitivity
Srel = f (λ)
100 OHF00368
S rel %
80
60
40
20
0
700 800 900 1000 nm 1200
λ
Dark current
IR = f (VR), E = 0
4000
Ι R pA
OHF00080
3000
2000
1000
0
0 5 10 15 V 20
VR
Photocurrent IP = f (Ee), VR = 5 V
Open-circuit voltage VO = f (Ee)
10 3
µA
ΙP
OHF01097 10 4
mV
10 2 10 3
VO
10 1 10 2
ΙP
10 0 10 1
10
-1
10
0
10 1
10 0
10 2 µW/cm 2 10 4
Ee
Capacitance
C = f (VR), f = 1 MHz, E = 0
100
OHF00081
C pF
80
70
60
50
40
30
20
10
0
10 -2 10 -1 10 0
10 1 V 10 2
VR
Total power dissipation
Ptot = f (TA)
160
Ptot
mW
140
OHF00958
120
100
80
60
40
20
0 0 20 40 60 80 ˚C 100
TA
Dark current
IR = f (TA), VR = 10 V, E = 0
10 3
Ι R nA
OHF00082
10 2
10 1
10 0
10 -1
0
20 40 60 80 ˚C 100
TA
Directional characteristics Srel = f (ϕ)
40
30
20 10
0
ϕ
1.0
50
0.8
60 0.6
OHF01402
70 0.4
80 0.2
0
90
100
1.0 0.8 0.6
0.4
0 20 40 60 80 100 120
Semiconductor Group
5
1998-08-27
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BPW34F.PDF ] | |
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