|
|
|
부품번호 | BPX38-4 기능 |
|
|
기능 | Silicon NPN Phototransistor | ||
제조업체 | Vishay Telefunken | ||
로고 | |||
전체 6 페이지수
Silicon NPN Phototransistor
BPX43
Vishay Telefunken
Description
BPX43 is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard TO–18 hermeti-
cally sealed metal case with a glass lens.
A superior linearity of photocurrent vs. irradiation
makes it ideal for linear applications. A base terminal
is available to enable biasing and sensitivity control.
Features
D Hermetically sealed TO–18 case
D Lens window
D Angle of half sensitivity ϕ = ± 15°
D Exact central chip alignment
D Base terminal available
D Very high photo sensitivity
D High linearity
D Suitable for visible and near infrared radiation
D Selected into sensitivity groups
94 8402
Applications
Detector for analogue and digital applications in industrial electronics, measuring and control, e.g. long range
light barriers with additional optics, optical switches, alarm systems.
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
xtp 10 ms
xTamb 25 °C
xt 5 s, distance from
ytouching border 2 mm
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tj
Top
Tstg
Tsd
RthJA
RthJC
Value
80
70
7
50
200
250
125
–55...+125
–55...+125
260
400
150
Unit
V
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
K/W
Document Number 81534
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
BPX43
Vishay Telefunken
50
40 f=1MHz
30
20
10
0
0.1
94 8364
1 10 100
VCB – Collector Base Voltage ( V )
Figure 7. Collector Base Capacitance vs.
Collector Base Voltage
80
f=1MHz
60
40
20
0
0.1 1
10
93 8365
VEB – Emitter Base Voltage ( V )
Figure 8. Emitter Base Capacitance vs.
Emitter Base Voltage
50
40 f=1MHz
30
20
10
0
0.1 1
10 100
94 8366
VCE – Collector Emitter Voltage ( V )
Figure 9. Collector Emitter Capacitance vs.
Collector Emitter Voltage
www.vishay.de • FaxBack +1-408-970-5600
4 (6)
1.0
0.8
0.6
0.4
0.2
0
400
94 8367
600 800 1000
l – Wavelength ( nm )
Figure 10. Relative Spectral Sensitivity vs. Wavelength
0° 10 20
°°
30°
40°
1.0
0.9 50°
0.8 60°
0.7 70°
80°
0.6 0.4 0.2 0 0.2 0.4 0.6
94 8371
Figure 11. Relative Radiant Sensitivity vs.
Angular Displacement
Document Number 81534
Rev. 2, 20-May-99
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ BPX38-4.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BPX38-2 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | Siemens Semiconductor Group |
BPX38-3 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | Siemens Semiconductor Group |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |