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부품번호 | BD676A 기능 |
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기능 | Medium Power Linear and Switching Applications | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 4 페이지수
BD676A/678A/680A/682
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD675A, BD677A, BD679A and BD681 respectively
PNP Epitaxial Silicon Transistor
1 TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: BD676A
: BD678A
: BD680A
: BD682
VCEO
Collector-Emitter Voltage
: BD676A
: BD678A
: BD680A
: BD682
VEBO
IC
ICP
IB
PC
Rθja
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: BD676A
: BD678A
: BD680A
: BD682
Test Condition
IC = - 50mA, IB = 0
ICBO
Collector-Base Voltage
: BD676A
: BD678A
: BD680A
: BD682
ICEO
Collector Cut-off Current : BD676A
: BD678A
: BD680A
: BD682
IEBO
hFE
Emitter Cut-off Current
* DC Current Gain
: BD676A/678A/680A
: BD682
VCE(sat)
* Collector-Emitter Saturation Voltage
: BD676A/678A/680A
: BD682
VBE(on)
* Base-Emitter On Voltage : BD676A/678A/680A
: BD682
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulse
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, VBE = 0
VCE = - 45V, VBE = 0
VCE = - 60V, VBE = 0
VCE = - 80V, VBE = 0
VCE = - 100V, VBE = 0
VEB = - 5V, IC = 0
VCE = - 3V, IC = - 2A
VCE = - 3V, IC = - 1.5A
IC = - 2A, IB = - 40mA
IC = - 1.5A, IB = - 30mA
VCE = - 3V, IC = - 2A
VCE = - 3V, IC = - 1.5A
Value
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
-5
-4
-6
- 100
14
88
150
- 65 ~ 150
Min. Typ.
- 45
- 60
- 80
- 100
750
750
Units
V
V
V
V
V
V
V
V
V
A
A
mA
W
°C/W
°C
°C
Max. Units
- 200
- 200
- 200
- 200
- 500
- 500
- 500
- 500
-2
µA
µA
µA
µA
µA
µA
µA
µA
mA
- 2.8 V
- 2.5 V
- 2.5 V
- 2.5 V
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
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intended to be an exhaustive list of all such trademarks.
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
Formative or In
Design
First Production
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ BD676A.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BD676 | Plastic Medium-Power Silicon PNP Darlingtons | Motorola Inc |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |