PDF BD789 Data sheet ( Hoja de datos )

Número de pieza	BD789
Descripción	Complementary Plastic Silicon Power Transistors
Fabricantes	Motorola Inc
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD789/D Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) — BD789, BD790 VCEO(sus) = 100 Vdc (Min) — BD791, BD792 • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc • High Current Gain — Bandwidth Product — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎfT = 40 MHz (Min) @ IC = 100 mAdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ— Peak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range Symbol VCEO VCB VEBO IC IB PD TJ,Tstg BD789 BD790 BD791 BD792 80 100 80 100 6.0 4.0 8.0 1.0 15 0.12 – 65 to + 150 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case Symbol RθJC Max 8.34 Unit Vdc Vdc Vdc Adc Adc Watts W/_C _C Unit _C/W 16 1.6 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 80 100 120 T, TEMPERATURE (°C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 140 ©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data 0 160 BDNP7N89 BD791 PNP BD790 BD792* *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80, 100 VOLTS 15 WATTS CASE 77–08 TO–225AA TYPE 1 1 page PACKAGE DIMENSIONS BD789 BD791 BD790 BD792 –B– U F QM –A– 123 H K C VJ GR S 0.25 (0.010) M A M B M D 2 PL 0.25 (0.010) M A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES DIM MIN MAX A 0.425 0.435 B 0.295 0.305 C 0.095 0.105 D 0.020 0.026 F 0.115 0.130 G 0.094 BSC H 0.050 0.095 J 0.015 0.025 K 0.575 0.655 M 5_ TYP Q 0.148 0.158 R 0.045 0.055 S 0.025 0.035 U 0.145 0.155 V 0.040 ––– MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5_ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ––– STYLE 1: PIN 1. 2. 3. EMITTER COLLECTOR BASE CASE 77–08 TO–225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 5 5 Page

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PDF Descargar	[ Datasheet BD789.PDF ]

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