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PDF BDB01C Data sheet ( Hoja de datos )
| Número de pieza | BDB01C | |
| Descripción | One Watt Amplifier Transistors | |
| Fabricantes | Motorola Inc | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Amplifier Transistors
NPN Silicon
Order this document
by BDB01C/D
BDB01C,D
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol BDB01C BDB01D
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCES
VEBO
IC
PD
80 100
80 100
5.0
0.5
1.0
8.0
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD 2.5 Watt
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
Thermal Resistance, Junction to Case
RqJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Voltage
(IC = 10 mA, IB = 0)
BDB01C
BDB01D
Collector Cutoff Current
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = 0)
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
BDB01C
BDB01D
1
23
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Symbol
Min
Max
Unit
V(BR)CEO
ICBO
IEBO
80
100
—
—
—
Vdc
—
—
mAdc
0.01
0.01
100 nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BDB01C.PDF ] | |
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