(PDF) BDP952 Datasheet - PNP Silicon AF Power Transistors

Número de pieza	BDP952
Descripción	PNP Silicon AF Power Transistors
Fabricantes	Infineon Technologies AG
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No Preview Available ! PNP Silicon AF Power Transistors For AF driver and output stages High current gain Low collector-emitter saturation voltage Complementary types: BDP951...BDP955 (NPN) BDP952...BDP956 4 3 2 1 VPS05163 Type BDP952 BDP954 BDP956 Marking BDP 952 BDP 954 BDP 956 1=B 1=B 1=B Pin Configuration 2=C 3=E 4=C 2=C 3=E 4=C 2=C 3=E 4=C Package SOT223 SOT223 SOT223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BDP952 BDP954 BDP956 Unit 80 100 120 V 100 120 140 5 55 3A 5 200 mA 500 3W 150 °C -65 ... 150 RthJS 17 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Jul-06-2001 1 page

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PDF BDP952 Data sheet ( Hoja de datos )