(PDF) BDP955 Datasheet - NPN Silicon AF Power Transistor

Número de pieza	BDP955
Descripción	NPN Silicon AF Power Transistor
Fabricantes	Infineon Technologies AG
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No Preview Available ! NPN Silicon AF Power Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP952 ... BDP956 (PNP) BDP951 ... BDP955 4 3 2 1 VPS05163 Type BDP951 BDP953 BDP955 Marking BDP 951 BDP 953 PDP 955 1=B 1=B 1=B Pin Configuration 2=C 3=E 4=C 2=C 3=E 4=C 2=C 3=E 4=C Package SOT223 SOT223 SOT223 Maximum Ratings Parameter Symbol BDP 951 BDP 953 BDP 955 Unit Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99 °C Junction temperature Storage temperature VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg 80 100 120 V 100 120 140 5 55 3A 5 200 mA 500 3W 150 °C -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Aug-06-2001 1 page

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PDF BDP955 Data sheet ( Hoja de datos )