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부품번호 | BDV64B 기능 |
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기능 | Complementary Silicon Plastic Power Darlingtons | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 7 페이지수
BDV65B (NPN),
BDV64B (PNP)
Complementary Silicon
Plastic Power Darlingtons
. . . for use as output devices in complementary general purpose
amplifier applications.
Features
• High DC Current Gain − HFE = 1000 (min) @ 5 Adc
• Monolithic Construction with Built−in Base Emitter Shunt Resistors
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Max
100
100
5.0
10
20
0.5
125
1.0
-65 to
+ 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
1.0 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
10 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100−120 VOLTS,
125 WATTS
NPN
COLLECTOR 2
PNP
COLLECTOR 2,4
BASE
1
BASE
1
EMITTER 3
BDV65B
EMITTER 3
BDV64B
1
2
3
SOT−93
(TO−218)
CASE 340D
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 14
1
Publication Order Number:
BDV65B/D
NPN
10K
BDV65B (NPN), BDV64B (PNP)
VCE = 4 V
PNP
10K
1K
1K
4
0.1
10
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
1
10 0.1
10
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
10
1 VBE(sat) @ IC/IB = 250
1 VBE(sat) @ IC/IB = 250
0.1
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. “On” Voltages
0.1
10 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 5. “On” Voltages
10
100
50 100 μs
20
5.0 ms 1.0 ms
10 dc
5
SECONDARY BREAKDOWN
LIMITED @ TJ v 150°C
1 THERMAL LIMIT @ TC = 25°C
BONDING WIRE LIMIT
BDV65B, BDV64B
1
10
30 50
100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 6. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150°C, TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 7. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
http://onsemi.com
4
4페이지 BDV65B (NPN), BDV64B (PNP)
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BDV65B/D
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BDV64 | POWER TRANSISTORS(12A/125W) | Mospec Semiconductor |
BDV64 | PNP SILICON POWER DARLINGTONS | Power Innovations Limited |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |